Ti diffusion in chalcogenides: a ToF-SIMS depth profile characterization approach

Thermal Stability of Ge2Sb2Te5 in Contact with Ti and TiN

“…This is confirmed by the analysis reported in Ref. 10. At lower temperatures (300°C, 30 min) neither titanium diffusion in the GST layer nor accumulation of titanium at the GST/SiO 2 interface is detected.…”

“…The Ti/GST interaction has already been investigated by Alberici et al, 10 Cabral et al, 11 and Chen et al 12 All the investigators reveal the fact that Te segregates from the chalcogenide material and interacts with Ti, forming TiTe 2 and various other compounds. It has been shown that the titanium interaction induces an irreversible phase segregation that suppresses the final transformation into the otherwise stable hexagonal close-packed (HCP) phase.…”

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

“…In some cases, the cell resistance of reset was changed to the low resistance of set after repetitive cycles of a given number of operations. This failure mode is termed, set-stuck [5][6][7][8]. In other cases, the cell resistance of set was changed to the high resistance of reset after the application of cyclic signals.…”

Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge2Sb2Te5

“…Ge-Sb-Te-based phase change materials have been extensively used in optical rewritable data storage media because of the changes in their optical and electrical properties that occur due to the phase change from the amorphous to the polycrystalline state. [1][2][3][4][5][6][7] Recently, the Ge-Sb-Te-based materials have been spotlighted for applications in new nonvolatile memory devices such as the phasechange random access memory (PRAM). In particular, the Ge 2 Sb 2 Te 5 (GST) pseudobinary alloy has been widely used and investigated.…”