Fe65Co35 thin films have been deposited on SiO2 substrates using sputtering technique with different choices of seed layer; Ru, Ni82.5Fe17.5, Rh, Y and Zr. Best soft magnetic properties were observed with seed layers of Ru, Ni82.5Fe17.5 and Rh. Adding these seed layers, the coercivity of the Fe65Co35 films decreased to values of around 1.5 mT, which can be compared to the value of 12.5 mT obtained for films deposited without seed layer. Further investigations were performed on samples with these three seed layers in terms of dynamic magnetic properties, both on as prepared and annealed samples, using constant frequency cavity and broadband ferromagnetic resonance measurements. Damping parameters of around 8.0 10−3 and 4.5 10−3 were obtained from in-plane and out-of-plane measurements, respectively, for the as prepared samples, values that were reduced to about 6.5 10−3 and 4.0 10−3 for annealed samples.
The effects of rhenium doping in the range 0 -10 at% on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focussing on the change of the saturation magnetization ( ) and the Gilbert damping parameter ( ) Both experimental and theoretical results show that decreases with increasing Re doping level, while at the same time increases. The experimental low temperature saturation magnetic induction exhibits a 29% decrease, from 2.31T to 1.64T, in the investigated doping concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the damping parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the damping, is for the undoped sample 2.7 × 10 −3 , which is close to the theoretically calculated Gilbert damping parameter. With 10 at% Re doping, the damping parameter increases to 9.0 × 10 −3 , which is in good agreement with the theoretical value of 7.3 × 10 −3 . The increase in damping parameter with Re doping is explained by the increase in density of states at Fermi level, mostly contributed by the spin-up channel of Re. Moreover, both experimental and theoretical values for the damping parameter are observed to be weakly decreasing with decreasing temperature.
In this study, the kinetics of titanium-Ge 2 Sb 2 Te 5 chalcogenide compound formation has been investigated by transmission electron microscopy, MeV helium-ion backscattering spectrometry, X-ray diffraction and secondary ion mass spectrometry. Two sets of samples have been used, one with titanium on a Ge 2 Sb 2 Te 5 film and the other with a reverse structure. To induce the compound formation, isothermal experiments were carried out at various temperatures. It has been found that titanium induces the dissociation of the chalcogenide layer and the formation of TiTe 2 compound. In both the samples, the growth of TiTe 2 is kinetically controlled with an activation energy of 0.9 ± 0.1 eV. In excess of titanium atoms with respect to tellurium, the dissociation of what is left in the original chalcogenide proceeds by the formation of TiGe x compound, leaving antimony and eventually germanium grains.
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