Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge2Sb2Te5

Park, Yu Jin; Lee, Jun Young; Youm, Min Soo; Kim, Yong Tae

doi:10.1143/jjap.44.326

Cited by 6 publications

(3 citation statements)

References 7 publications

(11 reference statements)

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“…This radius is consistent with the size (~10 nm) of minimal crystalline marks. It should be mentioned that this scale is also comparable to reported sizes of crystalline grains produced optically [23] and thermally [24], which may lend supports to this rough idea. However, a simple extension of this model to the c→a change, ∆G c→a = ∆G a + ∆G ac , cannot be accepted.…”

Section: Discussionsupporting

confidence: 83%

Smallest (∼10nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Tanaka

2007

Journal of Non-Crystalline Solids

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Electrical nano-scale crystallization and amorphization in amorphous and crystalline Ge 2 Sb 2 Te 5 films have been studied using scanning probe microscopes. In scanning tunneling microscopes, the phase changes can be induced, not by tunneling currents, but by conducting currents flowing through contacted probes. In an atomic force microscope, metallic cantilevers can produce phase-change marks with minimal sizes of ~10 nm. The crystallization and amorphization processes show different dependences upon thickness of Ge 2 Sb 2 Te 5 films. These features are discussed from thermo-dynamical and microscopic structural points-of-view.

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Section: Discussionsupporting

confidence: 83%

Smallest (∼10nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Tanaka

2007

Journal of Non-Crystalline Solids

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“…Crystallization in chalcogenide thin films is known to be initiated by randomly formed tiny nuclei throughout the film. 22,23) Figures 3(b) and 3(c) show that the random crystallization behavior of the middle and upper portions of Sb-Se-Te thin films is similar to that of an amorphous chalcogenide thin film. In Fig.…”

Section: Resultsmentioning

confidence: 87%

Transmission Electron Microscopy Study on the Crystallization of Sb–Se–Te Ternary Alloys

Yoon

Kim

Lee

et al. 2009

Jpn. J. Appl. Phys.

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The microstructure of Sb-Se-Te ternary alloy thin films annealed at 220, 230, and 300 C by rapid thermal annealing (RTA) was investigated using high-resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD) analysis. Compared to the T m of Ge 2 Sb 2 Te 5 ($616 C), the lower T m of the Sb-Se-Te (417 C) thin film can contribute toward reducing power consumption for the reset process of phase change materials. The horizontal long grains -grown along the interface in a fully crystallized Sb-Se-Te thin film sample and annealed at 300 C for 10 min -were hexagonal structured Sb 2 SeTe 2 with 15 layers; the c-axis was perpendicular to the substrate.

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“…2 Thus, limitation of the grain growth will effectively resist the drop of resistance and promote data retention of C-RAM devices. On the other hand, scaling-down the heating electrode of the * Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

O-Doped Si2Sb2Te5 Nano-Composite Phase Change Material for Application of Chalcogenide Random Access Memory

Zhang

Zhang²,

Liu³

et al. 2009

J. Nanosci. Nanotech.

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A method to prepare nano-composite phase change material was proposed and demonstrated by oxygen doping into Si2Sb2Te5 material. According to transmission electron microscope images, Si-Sb-Te-rich domains are separated from each other by SiOx-rich domains within the material. A proper dose of O-doping into Si2Sb2Te5 significantly reduces the grain size of the phase change material. Average size of Si-Sb-Te-rich domains is about 10 nm. Such separation will limit the phase-change to a relatively small volume. The reduction of grain size further results in the promotion of data retention and thermal stability of the material. Memory device based on O-doped Si2Sb2Te5 nano-composite phase change material, with a bottom electrode contact of 260 nm in diameter, was fabricated and characterized. The memory cell shows a better electrical performance compared with the Ge2Sb2Te5 based one.

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Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge₂Sb₂Te₅

Cited by 6 publications

References 7 publications

Smallest (∼10nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Smallest (∼10nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Transmission Electron Microscopy Study on the Crystallization of Sb–Se–Te Ternary Alloys

O-Doped Si<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> Nano-Composite Phase Change Material for Application of Chalcogenide Random Access Memory

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