O-Doped Si&lt;SUB&gt;2&lt;/SUB&gt;Sb&lt;SUB&gt;2&lt;/SUB&gt;Te&lt;SUB&gt;5&lt;/SUB&gt; Nano-Composite Phase Change Material for Application of Chalcogenide Random Access Memory

Zhang, Ting; Zhang, Song; Liu, Bo; Wang, Feng; Feng, Shuai

doi:10.1166/jnn.2009.c094

Cited by 15 publications

(7 citation statements)

References 8 publications

(10 reference statements)

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“…16 Recently, it has also been reported as the inorganic resists, 8 17 18 yielding some promising results. However, most of the reports are just focus on the selective wet-etching between amorphous and crystalline states of the GST material.…”

Section: Introductionmentioning

confidence: 99%

The Study on SiO2 Pattern Fabrication Using Ge1.5Sn0.5Sb2Te5 as Resists

Xi¹,

Liu²,

Tian³

et al. 2013

j. nanosci. nanotech.

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Ge1.5Sn0.5Sb2Te5 (GSST) can be easily induced to phase transition from amorphous state to crystalline state by a laser direct writing (LDW) system. The results show that the crystalline phase of GSST is more durable against acid solution corrosion than the amorphous phase. So nano-scale patterns and structures can be formed on the GSST film resists using laser-induced phase change and wet etching. Moreover, reactive ion etching (RIE) technology was applied to transfer these patterns onto the SiO2 substrate. The result shows to the extent that GSST material has thermal resist characteristics with high resolution and well etching selectivity to SiO2 when etched in the CHF3, which is compatibility with the future nanofabricate processing.

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Section: Introductionmentioning

confidence: 99%

The Study on SiO2 Pattern Fabrication Using Ge1.5Sn0.5Sb2Te5 as Resists

Xi¹,

Liu²,

Tian³

et al. 2013

j. nanosci. nanotech.

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“…As a storage medium, Phase-Change RAM (PCRAM) is mainly based upon chalcogenide (Group VI) and pnictide (Group V) elements, in the form of Germanium-antimony-tellurium (GST) alloys such as Ge 2 Sb 2 Te 5 (usually abbreviated as GST) and compositional variations of GeSb [ 101 ], GeTe [ 102 ], InSbTe [ 103 ], InGeTe [ 104 ], InSbGe, AgInSbTe [ 105 ], GeSbSeTe, GeSbReBi, SiSbTe [ 106 ], and SbTe [ 107 ]. The particularly relevant feature of these compositions, here, is that their electrical/optical properties, such as their electrical resistivity and optical reflectivity, differ sharply between their crystalline state (with a long-range atomic order) and their amorphous state (with a short-range atomic order).…”

Section: Logic In Phase-change Rammentioning

confidence: 99%

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Xiong

et al. 2020

Materials

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Recent progress in the development of artificial intelligence technologies, aided by deep learning algorithms, has led to an unprecedented revolution in neuromorphic circuits, bringing us ever closer to brain-like computers. However, the vast majority of advanced algorithms still have to run on conventional computers. Thus, their capacities are limited by what is known as the von-Neumann bottleneck, where the central processing unit for data computation and the main memory for data storage are separated. Emerging forms of non-volatile random access memory, such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory, and resistive random access memory, are widely considered to offer the best prospect of circumventing the von-Neumann bottleneck. This is due to their ability to merge storage and computational operations, such as Boolean logic. This paper reviews the most common kinds of non-volatile random access memory and their physical principles, together with their relative pros and cons when compared with conventional CMOS-based circuits (Complementary Metal Oxide Semiconductor). Their potential application to Boolean logic computation is then considered in terms of their working mechanism, circuit design and performance metrics. The paper concludes by envisaging the prospects offered by non-volatile devices for future brain-inspired and neuromorphic computation.

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“…Different physical properties can be usually implemented to indicate binary codes (i.e., '1' and '0'), while sustaining such properties difference when even downscaled to the nanoscale size implies the possibility of achieiving ultra-high storage capacity. To find out the targeted materials, majority of efforts have been devoted to the material characterization and synthesis, leading to an advent of several candidates such as the ferroelectric materials [8]- [10], the magnetic materials [11]- [13], and the resistive phase-change materials (PCMs) [14]- [16]. Within these candidates, PCMs have attained more attention due to its great downscalability, fast switching speed, long endurance cycling and stable data retention, and thus received widespread applications in the electrical storage market, mainly focused on phase-change random access memory (PCRAM), and phase-change electrical probe memory.…”

Section: Introductionmentioning

confidence: 99%

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Liu

Wang

2020

IEEE Access

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Phase-change materials, also well known as the Chalcogenide alloy, have received considerable attention during last two decades owing to its widespread applications in the field of the electrical storage market such as phase-change random access memory and phase-change probe memory. In addition to the storage devices, its unique electrical properties that can be dynamically tunable with respect to the electrical excitations lead to numerous novel applications represented by memristor and memristor-based neuromorphic electrical circuits. These emerging applications undoubtedly allows for a further exploitation of the potential of phase-change materials, and thus makes it advantageous over other storage medium like ferroelectric and magnetic materials. In order to help researchers understand the role of phase-change materials in these novel applications as well as their importance for citizen's daily life, a comprehensive review that not only covers the traditional storage applications, but also the applications on these exotic devices becomes imperative. In this review, the chemical structure of phase-change materials and their remarkable electrical properties are first reviewed, followed by an introduction of their applications on the storage fields. The physical principles of various emerging electrical devices using phase-change materials are subsequently overviewed in association with their state-of-the-art progress. The prospect of phase-change materials for the future non-volatile electrical applications that are yet to be unraveled is finally envisaged.

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O-Doped Si<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> Nano-Composite Phase Change Material for Application of Chalcogenide Random Access Memory

Cited by 15 publications

References 8 publications

The Study on SiO<SUB>2</SUB> Pattern Fabrication Using Ge<SUB>1.5</SUB>Sn<SUB>0.5</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> as Resists

The Study on SiO<SUB>2</SUB> Pattern Fabrication Using Ge<SUB>1.5</SUB>Sn<SUB>0.5</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> as Resists

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

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