Rimon Ikeno scite author profile

We have been studying on subthreshold characteristics of SOI MOSFETs in terms of substrate bias dependence, using a 1-D Poisson equation on an SOI multi-layer structure for estimating structural parameters of real devices[1]. Here, we consider quantum mechanical effects in the electron inversion layer of thin SOI MOSFETs, implementing a self-consistent solver of Poisson and Schrödinger equations in a 1-D subthreshold simulator. From results of simulations, we have concluded that quantum mechanical effects need to be considered in analizing thin SOI devices.

show abstract

COOL interconnect low power interconnection technology for scalable 3D LSI design

Chacin¹,

Uchida²,

Hagimoto³

et al. 2011

View full text Add to dashboard Cite

Electron-beam lithography with character projection exposure for throughput enhancement with line-edge quality optimization

Ikeno

Maruyama

Mita

et al. 2016

View full text Add to dashboard Cite

12 3

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Rimon Ikeno

A 4.6μm, 512×512, Ultra-Low Power Stacked Digital Pixel Sensor with Triple Quantization and 127dB Dynamic Range

A 4.6-μm, 127-dB Dynamic Range, Ultra-Low Power Stacked Digital Pixel Sensor With Overlapped Triple Quantization

High-throughput electron beam direct writing of VIA layers by character projection using character sets based on one-dimensional VIA arrays with area-efficient stencil design

Electron-beam lithography with character projection technique for high-throughput exposure with line-edge quality control

An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs

One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects

COOL interconnect low power interconnection technology for scalable 3D LSI design

Electron-beam lithography with character projection exposure for throughput enhancement with line-edge quality optimization

Contact Info

Product

Resources

About