An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs

Ikeno, Rimon; Aoki, Masaaki

doi:10.1016/s0038-1101(99)00299-3

Cited by 3 publications

(1 citation statement)

References 9 publications

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“…However, when negative charging exists at the PI substrate, hole concentration decreases then increases below the channel depth of 30 nm. It is known that the negative charges at the interface between the SiO 2 and PI result in an early turn-on V th leading to increased field effective mobility and I on , which is similar to the I D –V G characteristic observed from the double gate TFTs 16 , 17 . Hence, the state of charging at the interface determines the characteristics of the LTPS TFTs with a PI substrate.…”

Section: Resultssupporting

confidence: 63%

Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays

Kim

Park

Khim

et al. 2021

Sci Rep

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In this paper, we investigate the Vth shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The Vth of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the Vth with a glass substrate rarely changed even with increasing stress. Such a positive Vth shift results from the negative charging of fluorine stemmed from the PI under the gate bias. In fact, the C–V characterization on the metal–insulator-metal capacitor reveals that charging at the SiO2/PI interface depends on the applied gate bias and the PI material, which agrees well with the TCAD simulation and SIMS analyses. As a result, the charging at the SiO2/PI interface contributes to the Vth shift of the LTPS TFTs leading to image sticking.

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Section: Resultssupporting

confidence: 63%