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In this paper, the electrical properties of top‐gated thin‐film transistors with low‐cost chemical bath deposition (CBD) of ZnO as active material and a high‐k rare‐earth oxide La2O3 as gate dielectric have been reported. The source‐drain and gate electrodes and dielectric layers are fabricated by thermal evaporation techniques in high vacuum of the order of 10−6 Torr in a coplanar electrode structure. The channel length of the TFT is of 50 μm. The fabricated TFTs are annealed at 500 °C in air. The TFTs exhibit a field effect mobility 0.58 (cm2 V−1 s−1). Use of a high dielectric constant (high‐k) gate insulator reduces the threshold voltage and subthreshold swing of the TFTs. The TFTs exhibit a low threshold voltage of 4 V. The calculated values of gain–bandwidth product and subthreshold swing are also evaluated and presented. The ON/OFF ratio of the TFT is found to be 106.

Over the past decade, polymer-metal nanocomposites have drawn a great deal of attention due to their extensive application in organic flexible devices. Here, we describe the synthesis and characterisation of silver-polyvinyl alcohol nanocomposite thin films and investigates the possibility of application of these composite films as dielectric layer in efficient capacitors. The material characterisation is done through UV-vis absorption, scanning electron microscopy and atomic force microscope. The dielectric property of the nanocomposite material is investigated with a LCR meter. The different fabricating parameters for generating homogeneous thin films are optimised in this investigation. The composite material thin films exhibit high capacitance density and low dielectric loss and hence they may be suitable ingredients for high capacitance capacitors.

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In this paper, a systematic spectroscopic analysis on silver–polyvinyl alcohol ( Ag /PVA) nanocomposite thin films is reported. Ag /PVA nanocomposite thin films fabricated by thermal annealing process are shown to exhibit a strong localized surface plasmon resonance (LSPR) at wavelength around 400 nm. The effects of different fabricating parameters on the absorbance and spectral position of LSPR are also investigated. The particle sizes calculated from Mie light scattering theory are found to agree with the values obtained from SEM characterization.

ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

ZnO thin films are fabricated utilizing a cost effective sol-gel dip coating technique and potentially applied as active material in thin film transistors (TFT). The channel length of the TFT is maintained at 40 μm. Thermally deposited high -k La 2 O 3 is used as dielectric material. The fabricated ZnO films are annealed in oxygen atmosphere at 500 • C for 1 hour and characterized by XRD, EDX and SEM analysis. The TFTs are fabricated in top gate coplanar electrodes structure on glass substrates. The electrical characteristics of the TFTs are investigated and some important electrical parameters are evaluated. The TFTs exhibit field effect mobility of 1.9 cm 2 /VS, low threshold voltage of 2.5 Volt, high ON/OFF current ratio of 10 7 , sub-threshold swing of 0.8V/decade, transconductace of 1.2 × 10 −3 mho and gain band-width product of 20 kHz.

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