Effect of Ag doping on the electrical properties of thermally deposited CdS–La<sub>2</sub>O<sub>3</sub>TFTs

Gogoi, P. K.; Saikia, Rajib

doi:10.1080/00207217.2011.643503

Cited by 4 publications

(4 citation statements)

References 13 publications

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“…Many investigators have successfully employed La 2 O 3 as gate dielectric in TFTs and microelectronics. 16,17,[20][21][22][23][24] In this investigation, z E-mail: paragjyoti_g@rediffmal.com we have demonstrated the electrical characteristics of ZnO-La 2 O 3 TFTs fabricated using sol-gel derived dip coated ZnO thin films as active material and evaluation of various electrical parameters. The as deposited ZnO thin films are characterized by XRD, EDX and SEM analysis.…”

mentioning

confidence: 87%

“…The high gain band-width product of the devices is due to high field effect mobility. 23 The threshold voltage and sub-threshold swing are found to be relatively low. The improved value of the field effect mobility of the TFT is due to the reduction of structural defect of the ZnO crystal as the films are annealed in oxygen atmosphere at 500 • C. 34 At the annealing temperature passivation of the oxygen atoms into the interstitial positions of the ZnO crystals takes place and reduces the trapping of charges in the grain boundaries.…”

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confidence: 96%

“…Also the annealing in oxygen atmosphere decreases the number of shallow donors of interstitial Zn atoms and consequently the mobility of the carrier increases. 23,34 In summery sol-gel dip coating technique has been successfully employed to fabricate ZnO TFT which exhibits good electrical properties on annealed in oxygen atmosphere. High field effect mobility, high drain current ON-OFF ratio, low threshold voltage and sub-threshold swing and high gain band-width product have been observed in the case of the TFTs.…”

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confidence: 99%

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Sol-Gel Derived Dip Coated ZnO – La₂O₃Thin Film Transistors

Gogoi¹,

Saikia²,

Mahanta³

2018

ECS J. Solid State Sci. Technol.

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ZnO thin films are fabricated utilizing a cost effective sol-gel dip coating technique and potentially applied as active material in thin film transistors (TFT). The channel length of the TFT is maintained at 40 μm. Thermally deposited high -k La 2 O 3 is used as dielectric material. The fabricated ZnO films are annealed in oxygen atmosphere at 500 • C for 1 hour and characterized by XRD, EDX and SEM analysis. The TFTs are fabricated in top gate coplanar electrodes structure on glass substrates. The electrical characteristics of the TFTs are investigated and some important electrical parameters are evaluated. The TFTs exhibit field effect mobility of 1.9 cm 2 /VS, low threshold voltage of 2.5 Volt, high ON/OFF current ratio of 10 7 , sub-threshold swing of 0.8V/decade, transconductace of 1.2 × 10 −3 mho and gain band-width product of 20 kHz.

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confidence: 87%

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confidence: 96%

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confidence: 99%

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Sol-Gel Derived Dip Coated ZnO – La₂O₃Thin Film Transistors

Gogoi¹,

Saikia²,

Mahanta³

2018

ECS J. Solid State Sci. Technol.

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“…Due to the properties of insensitivity to impurities and being more stable owing to the absence of grain boundaries, amorphous dielectrics are suitable for gate dielectrics. Up till now many investigators have successfully used La 2 O 3 as a gate insulator in TFTs .…”

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confidence: 99%

ZnO TFTs prepared by chemical bath deposition technique with high‐k La₂O₃ gate dielectric annealed in ambient atmosphere

Gogoi¹,

Saikia²,

Saikia³

et al. 2015

Physica Status Solidi (a)

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In this paper, the electrical properties of top‐gated thin‐film transistors with low‐cost chemical bath deposition (CBD) of ZnO as active material and a high‐k rare‐earth oxide La2O3 as gate dielectric have been reported. The source‐drain and gate electrodes and dielectric layers are fabricated by thermal evaporation techniques in high vacuum of the order of 10−6 Torr in a coplanar electrode structure. The channel length of the TFT is of 50 μm. The fabricated TFTs are annealed at 500 °C in air. The TFTs exhibit a field effect mobility 0.58 (cm2 V−1 s−1). Use of a high dielectric constant (high‐k) gate insulator reduces the threshold voltage and subthreshold swing of the TFTs. The TFTs exhibit a low threshold voltage of 4 V. The calculated values of gain–bandwidth product and subthreshold swing are also evaluated and presented. The ON/OFF ratio of the TFT is found to be 106.

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Negative differential resistance as effect of Zn doping of chemically processed CdS thin film transistors

2017

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Effect of Ag doping on the electrical properties of thermally deposited CdS–La₂O₃TFTs

Cited by 4 publications

References 13 publications

Sol-Gel Derived Dip Coated ZnO – La₂O₃Thin Film Transistors

Sol-Gel Derived Dip Coated ZnO – La₂O₃Thin Film Transistors

ZnO TFTs prepared by chemical bath deposition technique with high‐k La₂O₃ gate dielectric annealed in ambient atmosphere

Negative differential resistance as effect of Zn doping of chemically processed CdS thin film transistors

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Effect of Ag doping on the electrical properties of thermally deposited CdS–La2O3TFTs

Cited by 4 publications

References 13 publications

Sol-Gel Derived Dip Coated ZnO – La2O3Thin Film Transistors

Sol-Gel Derived Dip Coated ZnO – La2O3Thin Film Transistors

ZnO TFTs prepared by chemical bath deposition technique with high‐k La2O3 gate dielectric annealed in ambient atmosphere

Negative differential resistance as effect of Zn doping of chemically processed CdS thin film transistors

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Effect of Ag doping on the electrical properties of thermally deposited CdS–La₂O₃TFTs

Sol-Gel Derived Dip Coated ZnO – La₂O₃Thin Film Transistors

Sol-Gel Derived Dip Coated ZnO – La₂O₃Thin Film Transistors

ZnO TFTs prepared by chemical bath deposition technique with high‐k La₂O₃ gate dielectric annealed in ambient atmosphere