We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.

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In this paper, the electrical properties of top‐gated thin‐film transistors with low‐cost chemical bath deposition (CBD) of ZnO as active material and a high‐k rare‐earth oxide La2O3 as gate dielectric have been reported. The source‐drain and gate electrodes and dielectric layers are fabricated by thermal evaporation techniques in high vacuum of the order of 10−6 Torr in a coplanar electrode structure. The channel length of the TFT is of 50 μm. The fabricated TFTs are annealed at 500 °C in air. The TFTs exhibit a field effect mobility 0.58 (cm2 V−1 s−1). Use of a high dielectric constant (high‐k) gate insulator reduces the threshold voltage and subthreshold swing of the TFTs. The TFTs exhibit a low threshold voltage of 4 V. The calculated values of gain–bandwidth product and subthreshold swing are also evaluated and presented. The ON/OFF ratio of the TFT is found to be 106.

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A study of Pentacene OTFTs using La 2 O 3 as gate insulator is presented. The device characteristics were studied and analyzed. The OTFTs exhibit p-type conductivity with field effect mobility 6.5 × 10 -8 m 2 /V.s, ON/OFF ratio 1.4 × 10 2 , sub-threshold swing 2 mV/decade and hole concentration 4.5 × 10 17 cm -3 . The SEM and XRD analysis on the semiconductor film are also reported.

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