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We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.

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Tetracene thin film transistors with rare earth oxide (Nd 2 O 3 ) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs .

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