Low-Cost $\hbox{MoO}_{3}/\hbox{Al}$ Bilayer Electrode for Pentacene-Based OTFTs

Sarma, Ranjit; Saikia, Dhrubajyoti

doi:10.1109/led.2010.2093502

Cited by 14 publications

(4 citation statements)

References 10 publications

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“…This result is in agreement with Ref. [26], thus we take the configuration of the oxygen vacancies to be in positions 𝑉 o and 𝑉 e in the following calculation.…”

supporting

confidence: 89%

Role of Oxygen Vacancy Arrangement on the Formation of a Conductive Filament in a ZnO Thin Film

Zhao

Dong

Zhao

et al. 2014

Chinese Phys. Lett.

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We perform first-principles calculations for ZnO thin films with oxygen vacancy defects. The densities of states, partial atomic densities of states, charge density differences and atomic populations are presented. We show that the SET process, i.e., from a high resistive state to a low resistive state, is attributable to the aggregation and regular arrangement of the oxygen vacancies, which causes the formation of conductive filaments and leads to the low resistive state of the system.

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“…This result is in agreement with Ref. [26], thus we take the configuration of the oxygen vacancies to be in positions 𝑉 o and 𝑉 e in the following calculation.…”

supporting

confidence: 89%

Role of Oxygen Vacancy Arrangement on the Formation of a Conductive Filament in a ZnO Thin Film

Zhao

Dong

Zhao

et al. 2014

Chinese Phys. Lett.

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“…A lot of materials, such as m-MTDATA, LiF, MoO 3 , and so on, were employed to improve the performance of OTFTs. [4][5][6] It is well known that pentacene-based OTFTs is a p-channel TFT, n-type semiconductor materials seem not suitable for field-effect carrier transporting through pentacene to drain electrode. However, the performance of OTFTs is indeed enhanced by using a n-type semiconductor material such as LiF as a buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Enhancing the performance of pentacene-based organic thin film transistors by inserting alternately stacked NPB and Alq<sub>3</sub> buffer layers

Weng

et al. 2011

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials

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“…In particular, the pentacene-based OTFTs have attracted much attention and have already demonstrated their potentials toward organic electronic applications due to their high field effect mobility comparable to that of amorphous Si-based TFTs [1,2]. However, there are still some unresolved problems of these pentacene-based OTFTs such as high operating voltage, instability under ambient atmosphere, etc.…”

mentioning

confidence: 99%

Enhancing air stability of pentacene-based OTFTs with pentacene double layer

Saikia

2013

Phys. Status Solidi A

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A new technique called a pentacene double layer is proposed in this paper to enhance the air stability of the pentacene-based OTFTs. A practically insulating amorphous layer of pentacene (P-II) deposited at very low substrate temperature is used as protective layer above the pentacene active layer (P-I) so that an encapsulation layer of SiO 2 can be deposited without damaging the active layer. This technique reduced the probability of interaction of O 2 and H 2 O with the active pentacene layer to zero during fabrication of the devices (multiple breakdown process), and hence can be fabricated without using nitrogen ambient chamber as a result the devices become highly cost effective.

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Low-Cost $\hbox{MoO}_{3}/\hbox{Al}$ Bilayer Electrode for Pentacene-Based OTFTs

Cited by 14 publications

References 10 publications

Role of Oxygen Vacancy Arrangement on the Formation of a Conductive Filament in a ZnO Thin Film

Role of Oxygen Vacancy Arrangement on the Formation of a Conductive Filament in a ZnO Thin Film

Enhancing the performance of pentacene-based organic thin film transistors by inserting alternately stacked NPB and Alq<sub>3</sub> buffer layers

Enhancing air stability of pentacene-based OTFTs with pentacene double layer

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