Improved performance of organic light-emitting diode with vanadium pentoxide layer on the FTO surface

Saikia, Dhrubajyoti; Sarma, Ranjit

doi:10.1007/s12043-017-1389-9

Cited by 11 publications

(5 citation statements)

References 26 publications

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“…Transparent conducting oxides (TCOs) have captured the attention of the scientific community in the past decades due to their ability to function both as an optical window as well as a top electrode for high-efficiency optoelectronic devices, such as thin film inorganic (μc-Si: H, CIGS, CdTe), [1,2] perovskite-based, [3,4] perovskite tandem based, [5] organic, [6] and dye-sensitized solar cells (DSSCs), [7] as well as for photodiodes, [8] and OLEDs. [9] Particularly, fluorine-doped tin oxide (F-SnO 2 ; FTO) is widely used in thin-film solar cells due to its low cost, thermal resistance, and electronic compatibility. [10,11] Unfortunately, most of the thin-film solar cells have state-of-the art efficiencies significantly lower than the theoretical maximum since the photon harvesting as well as the collection of photogenerated carriers is not yet optimized.…”

Section: Introductionmentioning

confidence: 99%

Optical Enhancement of Fluorine‐Doped Tin Oxide Thin Films using Infrared Picosecond Direct Laser Interference Patterning

2022

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Surface texturization of Transparent Conductive Oxides (TCOs) is a well‐known strategy to enhance the light‐trapping capabilities of thin‐film solar cells and thus, to increase their power conversion efficiency. Herein, the surface modification of fluorine‐doped tin oxide (FTO) using picosecond infrared direct laser interference patterning (DLIP) is presented. The surface characterization exhibits periodic microchannels, which act as diffraction gratings yielding an increase in the average diffuse transmittance up to 870% in the spectral range of 400–1000 nm. Despite the one dimensionality of the microstructures, the films did not acquire a significant anisotropic electrical behavior, but a partial deterioration of their conductivity is observed as a result of the removal of conductive material. This work proposes the feasibility of trading off a portion of the electrical conductivity to obtain a substantial improvement in the optical performance.

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Section: Introductionmentioning

confidence: 99%

Optical Enhancement of Fluorine‐Doped Tin Oxide Thin Films using Infrared Picosecond Direct Laser Interference Patterning

2022

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“…However, the situation of EBL-QLED A is different from other three QLEDs with TmPyPB EBL, its current is larger, which contradicts our assumptions about limiting electron injection. We attribute this result to tunneling effect which happens when large energy barrier exists and the film is thin, in this situation [31,37,38], charge carrier can inject more easily. The EIB between ZnO and TmPyPB is 1.4 V and the film thickness of TmPyPB fabricated from 2 mg ml −1 solution is thin enough, causing the enhanced electron injection in EBL-QLED A, which result in worse charge carrier imbalance in device and worse performance.…”

Section: Results and Discusstionmentioning

confidence: 98%

Performance improvements in all-solution processed inverted QLEDs realized by inserting an electron blocking layer

Zheng¹,

Song²,

Zhao³

et al. 2021

Nanotechnology

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Highly efficient, all-solution processed inverted quantum dot light-emitting diodes (QLEDs) are demonstrated by employing 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB) layer as electron blocking layer. Electron injection from ZnO electron transport layer to quantum dots (QDs) emission layer (EML) can be adjusted by thickness of TmPyPB layer, enabling the balanced charge carriers in QDs EML. With optimal thickness of this TmPyPB adjuster, 59.7% increment in the device current efficiency (from 8.2 to 13.1 cd A−1) and 46.2% improvement in the maximum luminance (from 31916 to 46674 cd m−2) are achieved, compared with those of the control QLED which has double hole transport layer structure. On the other hand, we find luminescence quenching process, which often happens at the interface of ZnO nanoparticles and QDs, is not obvious in our QLEDs, in which the ZnO layer is fabricated in precursor method, and this conclusion is verified through Time Resolution Photoluminescence test. In a word, this strategy provides a direction for optimizing charge carrier balance in all-solution processed inverted QLED.

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“…Transparent Conductive Oxides (TCOs) are extensively employed in optoelectronic devices due to their ability to work not only as a top electrode but also as an optical window. Some of the applications are related to touch screens 1 , smart windows 2 , photodiodes 3 , OLEDs 4 , and solar cells, such as those based on perovskite 5 – 7 , thin-film inorganic 8 , 9 , Dye-Sensitized (DSSCs) 10 , and organic materials 11 . Among the different TCOs that are being employed in the optoelectronic industry, Indium Tin Oxide (ITO) stands out for its high transparency and low sheet resistance 12 which are key attributes for producing highly-efficient solar cells 13 – 16 .…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic performance of indium tin oxide thin films structured by sub-picosecond direct laser interference patterning

Heffner

Soldera

Lasagni

2023

Sci Rep

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A route to increase the efficiency of thin film solar cells is improving the light-trapping capacity by texturing the top Transparent Conductive Oxide (TCO) so that the sunlight reaching the solar absorber scatters into multiple directions. In this study, Indium Tin Oxide (ITO) thin films are treated by infrared sub-picosecond Direct Laser Interference Patterning (DLIP) to modify the surface topography. Surface analysis by scanning electron microscopy and confocal microscopy reveals the presence of periodic microchannels with a spatial period of 5 µm and an average height between 15 and 450 nm decorated with Laser-Induced Periodic Surface Structures (LIPSS) in the direction parallel to the microchannels. A relative increase in the average total and diffuse optical transmittances up to 10.7% and 1900%, respectively, was obtained in the 400–1000 nm spectral range as an outcome of the interaction of white light with the generated micro- and nanostructures. The estimation of Haacke’s figure of merit suggests that the surface modification of ITO with fluence levels near the ablation threshold might enhance the performance of solar cells that employ ITO as a front electrode.

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Improved performance of organic light-emitting diode with vanadium pentoxide layer on the FTO surface

Cited by 11 publications

References 26 publications

Optical Enhancement of Fluorine‐Doped Tin Oxide Thin Films using Infrared Picosecond Direct Laser Interference Patterning

Optical Enhancement of Fluorine‐Doped Tin Oxide Thin Films using Infrared Picosecond Direct Laser Interference Patterning

Performance improvements in all-solution processed inverted QLEDs realized by inserting an electron blocking layer

Optoelectronic performance of indium tin oxide thin films structured by sub-picosecond direct laser interference patterning

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