Top gate ZnO−Al<sub>2</sub>O<sub>3</sub>thin film transistors fabricated using a chemical bath deposition technique

Gogoi, P. K.; Saikia, Rajib; Changmai, Sanjib

doi:10.1088/1674-4926/36/4/044002

Cited by 6 publications

(1 citation statement)

References 18 publications

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“…Moreover, ZnO-based TFTs were fabricated using a conventional SiO 2 gate oxide [11,12]. Top gate ZnO−Al 2 O 3 thin film transistors fabricated using a chemical bath deposition technique was reported [13]. ZrO 2 gate dielectric was employed in ZnO-based TFTs to reduce threshold voltage [14].…”

Section: Introductionmentioning

confidence: 99%

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Hwang,

Hsu

2023

Nanotechnology

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Zinc oxide (ZnO)-based thin-film transistors (TFTs) have attracted increasing attention towards flat-panel displays as alternatives to silicon-based TFTs due to their transparency to visible light. Magnesium oxide (MgO) has a wide bandgap (7.8 eV) and high dielectric constant (k). This leads to the development of TFTs using MgO as a gate oxide layer, which can significantly reduce the operating voltage. However, the electrical properties and dielectric constant of MgO are determined from the percentage of oxygen in MgO. In this study, a MgO gate-oxide was deposited on ZnO by magnetron sputtering at various oxygen concentrations (0, 66, and 100%) to fabricate TFTs. With an increase in the oxygen concentration, the oxygen vacancies of MgO were compensated, thereby improving the crystallinity and enhancing the dielectric constant from 6.53 to 12.9 for the oxygen concentrations of 0 and 100%. No pinch-off (saturation) behavior was observed in the TFTs with 0% oxygen; however, the pinch-off voltages were significantly reduced to 17 and 2 V in the TFTs with 66 and 100% oxygen, respectively; hence, the TFT-100 could be operated at a low operating voltage (2V). With an increase in oxygen from 0 to 100%, the threshold voltage and trap-state density significantly decreased from -159 V and 1.6 × 1018 cm−3 to -31.4 V and 6.5 × 1016 cm−3, respectively. The TFTs with 0% oxygen exhibited a higher field-effect mobility of 12 cm2/V-s due to the uncompensated oxygen vacancy in ZnO, which had a higher electron concentration. After introducing oxygen atoms, the field-effect mobility decreased to 0.16 cm2/V-s in the TFTs with 66% oxygen, which can be attributed to the compensated oxygen vacancy and lower electron concentration. In contrast, the field-effect mobility increased to 1.88 cm2/V-s for the TFTs with 100% oxygen due to the enhanced dielectric constant and crystallinity of MgO.

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Section: Introductionmentioning

confidence: 99%

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Hwang,

Hsu

2023

Nanotechnology

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Unearthing [3‐(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al₂O₃: Synthesis, Characterization and ALD Process Development

Mai

Gebhard

Arcos

et al. 2017

Chemistry A European J

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Identification and synthesis of intramolecularly donor-stabilized aluminium(III) complexes, which contain a 3-(dimethylamino)propyl (DMP) ligand, as novel atomic layer deposition (ALD) precursors has enabled the development of new and promising ALD processes for Al O thin films at low temperatures. Key for this promising outcome is the nature of the ligand combination that leads to heteroleptic Al complexes encompassing optimal volatility, thermal stability and reactivity. The first ever example of the application of this family of Al precursors for ALD is reported here. The process shows typical ALD like growth characteristics yielding homogeneous, smooth and high purity Al O thin films that are comparable to Al O layers grown by well-established, but highly pyrophoric, trimethylaluminium (TMA)-based ALD processes. This is a significant development based on the fact that these compounds are non-pyrophoric in nature and therefore should be considered as an alternative to the industrial TMA-based Al O ALD process used in many technological fields of application.

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Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide

Mai

Boysen

Zanders

et al. 2019

Chemistry A European J

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New precursor chemistries for the atomic layer deposition (ALD) of aluminium oxide are reported as potential alternatives to the pyrophoric trimethylaluminium (TMA) which is to date a widely used Al precursor. Combining the high reactivity of aluminium alkyls employing the 3‐(dimethylamino)propyl (DMP) ligand with thermally stable amide ligands yielded three new heteroleptic, non‐pyrophoric compounds [Al(NMe2)2(DMP)] (2), [Al(NEt2)2(DMP)] (3, BDEADA) and [Al(NiPr2)2(DMP)] (4), which combine the properties of both ligand systems. The compounds were synthesized and thoroughly chemically characterized, showing the intramolecular stabilization of the DMP ligand as well as only reactive Al−C and Al−N bonds, which are the key factors for the thermal stability accompanied by a sufficient reactivity, both being crucial for ALD precursors. Upon rational variation of the amide alkyl chains, tunable and high evaporation rates accompanied by thermal stability were found, as revealed by thermal evaluation. In addition, a new and promising plasma enhanced (PE)ALD process using BDEADA and oxygen plasma in a wide temperature range from 60 to 220 °C is reported and compared to that of a modified variation of the TMA, namely [AlMe2(DMP)] (DMAD). The resulting Al2O3 layers are of high density, smooth, uniform, and of high purity. The applicability of the Al2O3 films as effective gas barrier layers (GBLs) was successfully demonstrated, considering that coating on polyethylene terephthalate (PET) substrates yielded very good oxygen transmission rates (OTR) with an improvement factor of 86 for a 15 nm film by using DMAD and a factor of 25 for a film thickness of just 5 nm by using BDEDA compared to bare PET substrates. All these film attributes are of the same quality as those obtained for the industrial precursor TMA, rendering the new precursors safe and potential alternatives to TMA.

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Top gate ZnO−Al₂O₃thin film transistors fabricated using a chemical bath deposition technique

Cited by 6 publications

References 18 publications

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Unearthing [3‐(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al₂O₃: Synthesis, Characterization and ALD Process Development

Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide

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Top gate ZnO−Al2O3thin film transistors fabricated using a chemical bath deposition technique

Cited by 6 publications

References 18 publications

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Unearthing [3‐(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al2O3: Synthesis, Characterization and ALD Process Development

Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide

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Top gate ZnO−Al₂O₃thin film transistors fabricated using a chemical bath deposition technique

Unearthing [3‐(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al₂O₃: Synthesis, Characterization and ALD Process Development