We construct a D2-D8-D8 configuration in string theory, it can be described at low energy by two dimensional field theory. In the weak coupling region, the low energy theory is a nonlocal generalization of Gross-Neveu(GN) model which dynamically breaks the chiral flavor symmetry U(N f ) L × U(N f ) R at large N c and finite N f . However, in the strong coupling region, we can use the SUGRA/Born-Infeld approximation to describe the low energy dynamics of the system. Also, we analyze the low energy dynamics about the configuration of wrapping the one direction of D2 brane on a circle with anti-periodic boundary condition of fermions. The fermions and scalars on D2 branes get mass and decouple from the low energy theory. The IR dynamics is described by the QCD 2 at weak coupling. In the opposite region, the dynamics has a holographic dual description. And we have discussed the phase transition of chiral symmetry breaking at finite temperature. Finally, after performing T-duality, this configuration is related to some other brane configurations.
We demonstrate for the first time CMOS integration of dual WF (work function) metal gates on HfSiON using Ni-phase controlled FUSI. The novel integration scheme that we demonstrate uses our optimized 2-step Ni FUSI process (1) for simultaneous full silicidation of nMOS and pMOS, achieving different Ni/Si ratios on nMOS and pMOS by reduction of the pMOS poly height through a selective and controlled poly etch back prior to gate silicidation. This novel integration scheme offers the advantages of 1) simplicity (same Ni deposition and silicidation process on nMOS and pMOS), 2) large process window for poly etch-back process (same pMOS characteristics for poly thickness variation of 50%), 3) WF and Vt tuning on HfSiON by phase control, with 4) scalable, linewidth independent suitable Vt's for nMOS (0.5 V) and pMOS (-0.3 V), and 5) solves process yield issues of Ni-rich silicides related to volume expansion, stress, filaments and voiding, resulting in a continuous silicide that is nicely confined between the sidewall spacers. Ring oscillator operation was also demonstrated.
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