In-situ HfSiON/SiO&lt;sub&gt;2&lt;/sub&gt; gate dielectric fabrication using hot wall batch system

Aoyama, T.; Kamiyama, Satoshi; Tamura, Y.; Sasaki, Takashi; Mitsuhashi, R.; Torii, Kazuyoshi; Kitajima, Hiroshi; Arikado, T.

doi:10.1109/iwgi.2003.159207

Cited by 16 publications

(14 citation statements)

References 2 publications

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“…We used HfSiON gate dielectrics fabricated by metalorganic chemical vapor deposition (MOCVD) on p-type Si substrates. 9) The Hf ratio ½Hf=ðHf þ SiÞ of the silicate was 60% and nitrogen incorporation into the films was carried out by NH 3 annealing. The equivalent oxide thickness (EOT) obtained using a conventional poly-Si gate electrode was about 1.3 nm.…”

Section: Methodsmentioning

confidence: 99%

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Watanabe

Yoshida

Watanabe

et al. 2006

jjap

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Transient transport characteristic has been studied in the Pt/TiO 2Àx /Pt devices. A peak in the current density-time (J-t) curve was observed under direct-current (dc) electric field stress. The peak position () was investigated as a function of various dc field stress and measurement temperature (T ). With increase of field stress and T , exhibits a decrease. After analyzing the present result according to space-charge-limited current (SCLC) theory and electron/hole conduction influenced mode, we concluded that the transient current of Pt/TiO 2Àx /Pt device does not come from the oxygen vacancy (V O ) migration directly, but the electron/hole transport. The peak in the J-t curve is attributed to the change of electron/hole conduction caused by V O redistribution under dc field stress. #

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Section: Methodsmentioning

confidence: 99%

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Watanabe

Yoshida

Watanabe

et al. 2006

jjap

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“…TaSi x N y gate MOSFETs with HfSiON gate dielectrics were fabricated by a replacement gate process which did not include high temperature processes after the gate metal deposition (< 600 o C) (3). The HfSiON dielectrics were formed by the combination of MOCVD and a plasma-nitridation techniques (4,5).…”

Section: Introductionmentioning

confidence: 99%

Composition Control of TaSixNy Thin Films by Chemical Vapor Deposition for Future n-MOSFET Metal Gate Electrode

2006

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TaSixNy has been examined as a metal gate material for n- MOSFETs of the future. In order to control the composition of the TaSixNy film, a CVD method has been newly developed, using a commercial-based 300mm machine. The CVD film composition can be modified by stacking alternate depositions of TaN and Si. The effective workfunction of the gate electrode can be adjusted through the average composition of the TaSixNy. Excellent transistor characteristics have been confirmed, using HfSiON gate dielectric and a TaSixNy gate electrode.

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“…High-k MIS-FETs were fabricated with a conventional gate-first process. The wire-metal was 50nm W. The gate dielectric was 2.5nm HfSiON giving an effective-oxide-thickness (EOT) of 1.1nm [2,3]. Activation temperatures after gate-formation were 850-1000 o C. TiN and TiSiN metal-gate transistors were fabricated with the same process.…”

Section: Methodsmentioning

confidence: 99%

Carbon-Free Tantalum-Nitride Film from Ammonia and Extremely Diluted Pentakis-dimethylamino-Tantalum; Effect of Silicon Incorporation to nMIS-FET Metal-Gate

Sugita¹,

Aoyama²,

Nara³

2008

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials

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In-situ HfSiON/SiO<sub>2</sub> gate dielectric fabrication using hot wall batch system

Cited by 16 publications

References 2 publications

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Composition Control of TaSixNy Thin Films by Chemical Vapor Deposition for Future n-MOSFET Metal Gate Electrode

Carbon-Free Tantalum-Nitride Film from Ammonia and Extremely Diluted Pentakis-dimethylamino-Tantalum; Effect of Silicon Incorporation to nMIS-FET Metal-Gate

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