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The low-frequency noise behavior of replacement metal gate high-k/metal-gate MOSFETs with an equivalent oxide thickness of the SiO 2 /HfO 2 bilayer in the range ∼1 nm has been investigated. It will be shown that both the average trap density and its profile derived from the frequency exponent γ of the flicker noise spectra are mainly determined by the interfacial layer (IL) oxide processing, with a higher trap density corresponding with a thinner chemical oxide, compared with a ≤1-nm thermal SiO 2 IL. The thickness of the HfO 2 layer and the metal gate fill has only a marginal impact on the noise power spectral density. It will also be shown that for the extraction of the trap density profiles from the 1/f γ noise spectra accurate values for the tunneling effective mass and barrier height are required.Index Terms-Flicker noise, high-k (HK) gate dielectrics, low-frequency (LF) noise, oxide trap density, tunneling.