Abstract-In this paper, a remote O 2 ion source is used for the formation of nano-oxide layers. The oxidation efficiency was measured in CoFe-oxide films, and a decrease of the oxide layer with the pan angle and the oxidation pressure is observed. For the same oxidation pressure, the oxidation efficiency depends on the O 2 content in the Ar-O 2 plasma. These results were applied in optimizing the fabrication of Al 2 O 3 barrier for tunnel junctions. This method was also used to fabricate junctions with Fe-oxide layers inserted at the Al 2 O 3 -CoFe interface. TEM and magnetization data indicate that after anneal at 385 C, a homogeneous ferromagnetic Fe-oxide layer (Fe 3 O 4 ?) is formed.