A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.

Spin logic devices, due to their programmability and nonvolatility, are deemed as an ideal building block for the next generation of electronics. Though several types of spin logic based on domain wall motion, spin‐field‐effect transistor and automata made of magnetic nanoparticles have been proposed, an architecture with scalability, energy efficiency and compatibility with current complementary metal‐oxide‐semiconductor technology is still in urgent demand. Here, it is experimentally demonstrated that the spin Hall effect in magnetic films with perpendicular anisotropy can be utilized to construct such a spin logic device. Five commonly used logic gates with nonvolatility in a single device are realized. This demonstration could pave the way towards application of spintronics in logic circuits as well as the memory industry in the near future and could even give birth to logic‐in‐memory computing architectures.

An in situ formed hydrogel was synthesized by sodium alginate and cysteine methyl ester, which turned the sodium alginate into thiolated alginate (SA-SH). SA-SH can in situ formed into hydrogel (SA-SS-SA) with a large amount of water through covalent bond in less than 20 s. The structure characterization showed that the mechanism of SA-SH gelation was thiol-disulfide transformation. The rheology and cytotoxicity experiments of SA-SS-SA hydrogel were also investigated, which indicated that SA-SS-SA hydrogel had an appropriate mechanical strength as well as an excellent biocompatibility. The SA-SS-SA hydrogel would degrade under certain conditions after a few days and its mechanism was disulfide alkaline reduction. Finally, the hemostatic property of SA-SH was tested by rat tail amputation experiment. The time to hemostasis of rat reduced from 8.26 min to 3.24 min, which proved that SA-SH had an excellent hemostatic property.

A polarization-mediated heterointerface is designed to research the thermal stability of magnetic metal/oxide interfaces. Using polarization engineering, the thermal stability of the interface between BiFeO3 and CoFeB can be improved by about 100°C. This finding provides new insight into the chemistry of the metal/oxide heterointerface.