Formation of submicron oxide widths on aluminum in the presence of keV electron beams and CO2 or N2O J. Vac. Sci. Technol. A 4, 241 (1986); 10.1116/1.573435Electron beam lithography from 20 to 120 keV with a high quality beam Electron beam induced deposition from W͑CO͒ 6 was studied for beam energies between 2 and 20 keV and a range of exposure doses, to investigate the dependence of deposit thickness and electrical conductivity on energy and the dependence of deposit conductance on cumulative exposure dose. Larger deposited thicknesses and higher conductivities were produced at the lower beam energies and were attributed to the higher secondary electron yield at lower energies. The deposit thickness was found to scale linearly with exposure dose. The initial dependence of conductance on exposure dose ͑and deposit thickness͒ was nonlinear and was attributed to the change from a discontinuous to a continuous film, and to increased backscattering. The subsequent dependence of conductance on exposure dose was linear for deposit thicknesses which were small compared with the electron range, implying that burial precludes the further decomposition of partially decomposed W͑CO͒ 6 molecules incorporated in the deposit. Transmission electron microscope examination showed that the structure of the deposits depended on the beam scanning conditions. Deposits were used to form a mask for CF 4 plasma etching of Si, while deposits on a doped GaAs substrate were found to form a Schottky contact with an ideality factor of 1.40, enabling the repair of a metal-semiconductor field-effect transistor gate to be demonstrated.

Synchrotron radiation induced chemical vapor deposition of thin films from metal hexacarbonyls* Lowtemperature chemical vapor deposition of tungsten from tungsten hexacarbonyl

We have studied focused electron beam induced deposition from W(CO)6 at beam primary energies between 20 and 0.06 keV. Submicrometer resolution with 4 nA beam current was maintained at very low primary energies using a retarding field configuration. Decomposition cross sections of W(CO)6 for primary energies below about 1 keV were found to be about a factor of 4 larger than those at 20 keV. Depending on the scan conditions, the resistivity of the deposits formed using low primary energies was found to be up to about a factor of 4 lower than at 20 keV implying a higher metallic content. These results form the basis of an improved method for repairing clear defects on x-ray masks and for making conducting tracks on semiconducting materials.

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Electron-beam mastering of templates for patterned media presents a challenge to the toolmaker to simultaneously meet throughput, resolution and placement requirements. Fundamental to tool development is the ability to measure the placement to true grid of shapes as small as 7 nm over the whole substrate. In this article we describe a technique, consisting of acquiring and analyzing scanning electron (SE) micrographs, for measuring the placement errors in lithography similar to that required for patterned media, albeit over a few square microns and without scale and orthogonality components. The method enabled the measurement of placement errors of dots in an array with accuracy down to about 2 nm. The technique was used to benchmark current X-Y tool performance and the smallest 3× standard deviation of placement error was found to be 4.5 nm. A clearer understanding of the necessary tool improvements was obtained. The use of the technique as basis for measuring errors to true grid over the entire substrate is discussed.

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