Ultralow-energy focused electron beam induced deposition

Hoyle, P. C.; Cleaver, J. R. A.; Ahmed, H.

doi:10.1063/1.111912

Cited by 47 publications

(39 citation statements)

References 6 publications

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“…It was found for W͑CO͒ 6 by Hoyle et al 99 that the conductivity increases with decreasing energy ͑var-ied between 500 eV and 20 keV͒. This trend was confirmed for W͑CO͒ 6 lines deposited with energies between 20 and 30 keV by Kohlmann-von Platen et al 90 In contradiction with these results, the conductivity of lines deposited from trimethyl-platinum-methylcyclopentadienyl ͑MeCpPtMe 3 ͒ decreased by a factor of 3 when the PE energy increased from 5 to 20 keV.…”

Section: Conductivitycontrasting

confidence: 51%

“…This, and the fact that low aspect ratio structures were used ͑instead of tips, for instance͒, makes the occurrence of e-beam induced heating in any of the experiments not very likely. Hoyle et al 99 explained their results by assuming that SEs play a major role in the deposition process. At lower PE energies, precursor molecules undergo more collisions with electrons, increasing the desorption of volatile species and increasing the metal content.…”

Section: Conductivitymentioning

confidence: 99%

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A critical literature review of focused electron beam induced deposition

Dorp

Hagen

2008

Journal of Applied Physics

483

577

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An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied ͑current density, acceleration voltage, scan patterns, etc.͒. Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and ͑as far as possible͒ interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters ͑such as the local precursor pressure͒ are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally, there is a limited understanding of the mechanism of electron induced precursor dissociation. In many cases, the deposit composition is not directly dependent on the stoichiometric composition of the precursor and the electron induced decomposition paths can be very different from those expected from calculations or thermal decomposition. The dissociation mechanism is one of the key factors determining the purity of the deposits and a better understanding of this process will help develop electron beam induced deposition into a viable nanofabrication technique.

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Section: Conductivitycontrasting

confidence: 51%

Section: Conductivitymentioning

confidence: 99%

A critical literature review of focused electron beam induced deposition

Dorp

Hagen

2008

Journal of Applied Physics

483

577

View full text Add to dashboard Cite

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“…Variation of the beam parameters (such as beam energy, beam current) or deposition conditions (precursor pressure, beam dwell time, etc) can have an influence on the resulting deposition's purity [69][70][71][72]. Besides [69][70][71][72] there are no significant systematic studies, i.e.…”

Section: Variation Of Beam Parameters or Deposition Conditionsmentioning

confidence: 99%

“…Besides [69][70][71][72] there are no significant systematic studies, i.e. results from the entire range of available beam energies, beam currents, dwell times, etc, of the deposition conditions from a purity or resistivity perspective.…”

Section: Variation Of Beam Parameters or Deposition Conditionsmentioning

confidence: 99%

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

Mulders²,

2009

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The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast 'point-and-shoot' creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One significant drawback to date has been the low purity level of the deposition. This has two independent causes: (1) partial or incomplete decomposition of the precursor molecule and (2) contamination from the residual chamber gas. This frequently limits the functionality of the structure, hence it is desirable to improve the decomposition and prevent the inclusion of contaminants. In this contribution we review and compare for the first time all the techniques specifically aimed at purifying the as-deposited impure EBID structures. Despite incomplete and scattered data, we observe some general trends: application of heat (during or after deposition) is usually beneficial to some extent; working in a favorable residual gas (ultra-high vacuum set-ups or plasma cleaning the chamber) is highly recommended; gas mixing approaches are extremely variable and not always reproducible between research groups; and carbon-free precursors are promising but tend to result in oxygen being the contaminant species rather than carbon. Finally we highlight a few novel approaches.

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“…To date there have been some studies on this subject at the standard energies used in scanning microscopes ranging from 1 to 30 keV. [9][10][11] However it is experimentally difficult to go lower than 1 keV with a focused beam in a standard scanning electron microscope ͑SEM͒ and to date there exists no relevant literature on the low-energy part of the curve, except for Hoyle et al 12 for tungsten from W͑CO͒ 6 and Kunz and Mayer 13 for the growth and etching of SiO x .…”

Section: Introductionmentioning

confidence: 99%

Electron-beam-induced deposition of platinum at low landing energies

Botman

Winter

Mulders³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Electron-beam-induced deposition of platinum from methylcyclopentadienyl-platinum-trimethyl was performed with a focused electron beam at low landing energies, down to 10 eV. The deposition growth rate is maximal at 140 eV, with the process being over ten times more efficient than at 20 kV. No significant dependence of composition with landing energy was found in the deposits performed at energies between 40 and 1000 eV. This study provides further evidence for the dissociation process being primarily driven by the sub-20-eV secondary electrons.

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Ultralow-energy focused electron beam induced deposition

Cited by 47 publications

References 6 publications

A critical literature review of focused electron beam induced deposition

A critical literature review of focused electron beam induced deposition

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

Electron-beam-induced deposition of platinum at low landing energies

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