Fabrication of free-standing microtransducers in GaAs with an electron-beam-induced oxide mask and Cl2 etching

Hoyle, P. C.; Cleaver, J. R. A.; Ahmed, H.

doi:10.1016/0924-4247(96)80082-3

Cited by 1 publication

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“…Potassium hydroxide (KOH), ethylenediamine pyrochatechol (EDP), tetramethyl ammonium hydroxide (TMAH), as well as 126 HNO 3 :60 H 2 O:5 NH 4 F or HNO 3 + H 2 O + HF mixtures, and dry SF 6 gas are commonly used as etchants for silicon etching. 5,6 However, most of the reported etching experiments are suitable for conventional semiconductor materials such as silicon, 5,7 GaAs, 8 and InP 9 and partially for some materials for magnetic devices, e.g., NiFe, 10 FeCrB/ CoNbZr, 11 and IrMn/NiFe. 12 Therefore, it is necessary to develop a reliable etching process that does not affect the structural and electrical qualities of the CMR manganites while providing a high etch rate and selectivity.…”

Section: Introductionmentioning

confidence: 98%

Wet Etching Study of La0.67(Sr0.5Ca0.5)0.33MnO3 Films on Silicon Substrates

Kim

Grishin

Ignatova

2007

Journal of Elec Materi

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Wet etching of colossal magnetoresistive (CMR) perovskite La 0.67 (Sr 0.5 Ca 0.5 ) 0.33 MnO 3 (LSCMO) films on Bi 4 Ti 3 O 12 /CeO 2 /yttrium-stabilized zirconia (YSZ)-buffered Si substrates was investigated using potassium hydroxide (KOH) and buffered hydrofluoric acid (BHF) solutions. X-ray diffraction (XRD) and scanning spreading resistance microscopy (SSRM) measurements revealed that the morphological roughness of the LSCMO films increases, while the electrical resistance roughness decreases, with increasing KOH etching time. The LSCMO films are highly chemically resistant to KOH solution; however, in the case of BHF etching, an etch rate of 22 nm/min was obtained with high selectivity over a photoresist mask.

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