High perfection chirped grating phase masks by electron-beam definition

Rogers, Chris; Goodchild, D.; Baulcomb, R.S.; Butler, M. A.; Hoyle, P. C.; Kanellopoulos, S.E.; Clements, S.J.; Pugh, B.

doi:10.1116/1.590983

Cited by 6 publications

(3 citation statements)

References 8 publications

(3 reference statements)

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“…9,10 In addition, random spatial-phase errors increase out-of-band reflection over a broader range of wavelengths. It has been found, primarily in fiber-Bragg gratings, that periodic spatial-phase errors lead to additional discrete reflection peaks.…”

Section: Device Fabrication Via Spleblmentioning

confidence: 99%

Optical waveguides with apodized sidewall gratings via spatial-phase-locked electron-beam lithography

Hastings¹,

Lim²,

Goodberlet³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inElectron-beam lithography for photonic waveguide fabrication: Measurement of the effect of field stitching errors on optical performance and evaluation of a new compensation method Electron beam lithography writing strategies for low loss, high confinement silicon optical waveguidesWe describe a technique to fabricate Bragg gratings in the sides of optical waveguides using a single lithographic step. This technique is particularly suited to the apodized gratings required for add/drop filters in dense-wavelength-division multiplexing. Apodization minimizes cross talk between channels and improves the filter response. Silicon-on-insulator rib waveguides with both uniform and apodized gratings were fabricated using direct-write spatial-phase-locked electron-beam lithography ͑SPLEBL͒. This approach combines SPLEBL's pattern-placement accuracy with the flexibility of direct-write device prototyping. The resulting grating-based devices exhibited substantially reduced side-lobe levels.

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Section: Device Fabrication Via Spleblmentioning

confidence: 99%

Optical waveguides with apodized sidewall gratings via spatial-phase-locked electron-beam lithography

Hastings¹,

Lim²,

Goodberlet³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…We have further demonstrated lasing thresholds of 2 mJ and tunability over 24 nm with increments of 6 nm on a single chip. Applying multiple electron exposure 31 variations of the DFB grating period below the resolution limit of the electron beam lithography system may be achieved. This can allow for continuous tunability of the laser emission by tuning the grating period L. 32 By using 3 mm long DFB gratings we have achieved ultra-high pulse energies that exceed 10 mJ.…”

Section: Discussionmentioning

confidence: 99%

Diffusion driven optofluidic dye lasers encapsulated into polymer chips

et al. 2012

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Lab-on-a-chip systems made of polymers are promising for the integration of active optical elements, enabling e.g. on-chip excitation of fluorescent markers or spectroscopy. In this work we present diffusion operation of tunable optofluidic dye lasers in a polymer foil. We demonstrate that these first order distributed feedback lasers can be operated for more than 90 min at a pulse repetition rate of 2 Hz without fluidic pumping. Ultra-high output pulse energies of more than 10 μJ and laser thresholds of 2 μJ are achieved for resonator lengths of 3 mm. By introducing comparatively large on-chip dye solution reservoirs, the required exchange of dye molecules is accomplished solely by diffusion. Polymer chips the size of a microscope cover slip (18 × 18 mm(2)) were fabricated in batches on a wafer using a commercially available polymer (TOPAS(®) Cyclic Olefin Copolymer). Thermal imprinting of micro- and nanoscale structures into 100 μm foils simultaneously defines photonic resonators, liquid-core waveguides, and fluidic reservoirs. Subsequently, the fluidic structures are sealed with another 220 μm foil by thermal bonding. Tunability of laser output wavelengths over a spectral range of 24 nm on a single chip is accomplished by varying the laser grating period in steps of 2 nm. Low-cost manufacturing suitable for mass production, wide laser tunability, ultra-high output pulse energies, and long operation times without external fluidic pumping make these on-chip lasers suitable for a wide range of lab-on-a-chip applications, e.g. on-chip spectroscopy, biosensing, excitation of fluorescent markers, or surface enhanced Raman spectroscopy (SERS).

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“…5 The effect of stitching errors on the propagation within waveguides depends on the amount of interaction between the mode and the defect in the waveguide. In silicon on insulator ͑SOI͒, because of the high refractive index contrast, the fundamental mode of a single mode waveguide ͑photonic wire͒ is tightly confined and overlaps strongly with the sidewall.…”

Section: Introductionmentioning

confidence: 99%