Double-gate single-electron transistors (SETs) were fabricated by chemical assembling using electroless gold-plated nanogap electrodes and chemisorbed chemically synthesized gold nanoparticles. The fabricated SET showed periodic and stable Coulomb oscillations under application of voltages of both gates. The sole SET also exhibited all two-input logic operations-XOR, XNOR, NAND, OR, NOR, and AND-with an on/off ratio of 10(2). This demonstrates the potential of chemical assembling to give highly stable SETs exhibiting all logic operations.
We report inelastic electron tunneling spectroscopy (IETS) of a C8 alkanethiol self-assembled monolayer using a scanning tunneling microscope (STM). High-resolution STM IETS spectra show clear features of the C-H bending and C-C stretching modes in addition to the C-H stretching mode, which enables a precise comparison with previously reported vibrational spectroscopy, especially electron energy loss spectroscopy data. Intensity variation of vibrational peaks with tip position is discussed with the STM IETS detection mechanism.
We investigate inelastic electron tunneling spectroscopy (IETS) for alkanethiol self-assembled monolayers (SAM) with a scanning tunneling microscope and compare it to first-principles calculations. Using a combination of partial deuteration of the molecule and high-resolution measurements, we identify and differentiate between methyl (CH3) and methylene (CH2) groups and their symmetric and asymmetric C-H stretch modes. The calculations agree quantitatively with the measured IETS in producing the weight of the symmetric and asymmetric C-H stretch modes while the methylene stretch mode is largely underestimated. We further show that inelastic intermolecular scattering is important in the SAM by plotting the theoretical current densities.
We describe a first principles method to calculate scanning tunneling microscopy (STM) images, and compare the results to well-characterized experiments combining STM with atomic force microscopy (AFM). The theory is based on density functional theory (DFT) with a localized basis set, where the wave functions in the vacuum gap are computed by propagating the localized-basis wave functions into the gap using a real-space grid. Constant-height STM images are computed using Bardeen's approximation method, including averaging over the reciprocal space. We consider copper adatoms and single CO molecules adsorbed on Cu(111), scanned with a single-atom copper tip with and without CO functionalization. The calculated images agree with state-of-the-art experiments, where the atomic structure of the tip apex is determined by AFM. The comparison further allows for detailed interpretation of the STM images.
We study the physics of atomic manipulation of CO on a Cu(111) surface by combined scanning tunneling microscopy and atomic force microscopy at liquid helium temperatures. In atomic manipulation, an adsorbed atom or molecule is arranged on the surface using the interaction of the adsorbate with substrate and tip. While previous experiments are consistent with a linear superposition model of tip and substrate forces, we find that the force threshold depends on the force field of the tip. Here, we use carbon monoxide front atom identification (COFI) to characterize the tip's force field. Tips that show COFI profiles with an attractive center can manipulate CO in any direction while tips with a repulsive center can only manipulate in certain directions. The force thresholds are independent of bias voltage in a range from 1 to 10 mV and independent of temperature in a range of 4.5 to 7.5 K.
We study inelastic scattering in alkanethiol self-assembled monolayers using isotope labeling and unambiguously determine which molecular vibrations are active in the inelastic electron tunneling spectroscopy. The selective deuteration of the molecule also allows us to show that the different parts of the molecule contribute approximately equally to inelastic signal. Our first principles calculations confirm the experimental results and provide insights on electron transport through molecules.
Au nanoparticle single-electron transistors with metal-bridged top-gates and nanogap electrodes were fabricated using two consecutive electron beam lithography and electroless Au plating steps. The metal-bridged top-gate electrodes were suspended above electroless Au plated nanogap electrodes. Au nanoparticles (5.2 nm in diameter) were chemisorbed between the nanogap electrodes after top-gate fabrication. Clear Coulomb diamonds were observed at 9 K. The gate capacitance Cg of the top-gate electrodes was 99 zF, which is 10 times larger than that of a similar device with only side-gate electrodes.
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