Nanoparticle single-electron transistor with metal-bridged top-gate and nanogap electrodes

Azuma, Yasuo; Suzuki, Seiichi; Maeda, Kazunari; Okabayashi, Norio; Tanaka, Daisuke; Sakamoto, Masanori; Teranishi, Toshiharu; Buitelaar, M. R.; Smith, C. G.; Majima, Yutaka

doi:10.1063/1.3626036

Cited by 25 publications

(27 citation statements)

References 17 publications

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“…The measurement temperature was 9 K. All measurements were conducted under the same conditions as in previous studies [21–23]. The vacuumpressure in the measurement chamber was approximately Pa.…”

Section: Methodsmentioning

confidence: 99%

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

Majima

Hackenberger

Azuma

et al. 2017

Science and Technology of Advanced Materials

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Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

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Section: Methodsmentioning

confidence: 99%

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

Majima

Hackenberger

Azuma

et al. 2017

Science and Technology of Advanced Materials

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“…Electrically stable SETs (chemically assembled SETs) have been demonstrated by using the same chemisorption process to deposit a single synthesized Au NP between size-regulated nanogap electrodes formed by electroless-gold plating. 54,[60][61][62][63][64][65] Therefore, chemisorption is more promising than physisorption for stable and ideal electrical transport through the NPs by STM and STS.…”

Section: Synthesized Nanoparticlesmentioning

confidence: 99%

“…Several applications for NPs have been reported: singleelectron transistors (SETs), 53,54,[56][57][58][59][60][61][62][63][64][65][66][67][68] switches, 31,69 and lightemitting diodes. 31,70 To design nanodevices with NPs, it is necessary to evaluate the intrinsic properties of a single NP, such as the conductivity and quantum tunneling effect.…”

Section: Introductionmentioning

confidence: 99%

Nanoparticle characterization based on STM and STS

2015

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In this review, we describe recent progress made in the study of nanoparticles characterized by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Basic principles of STM measurements and single-electron tunneling phenomena through a single NP are summarized. We highlight the results of electrical and photonic properties on NPs studied by STM and STS. Because nanoparticles are single-digit nanometre in diameter, a single-electron transport on individual nanoparticles such as Coulomb blockade and resonant tunneling through discrete energy levels are investigated. Photon-emission from NPs is also introduced based on STM measurements. Novel single-nanoparticle functions such as stochastic blinking and one-write erasing behaviours are presented. This review provides an overview of nanoparticle characterization methods based on STM and STS that include the detailed understanding of the electrical and photonics properties of nanoparticles.

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“…The method also shows its superiority in the ability to produce electrodes with multifingers . With the above mentioned advantages, this approach was used to study the electrical properties of particles and molecules, and transistors were fabricated with side electrodes as gates or a bridged top gate . Although the contamination of the surface of the electrodes is hard to be totally removed at present, which makes the molecule in the junction difficult to identify, the unique advantages of the techniques still make it promising for molecular electronics.…”

Section: Fabrication Of Gated Nanogap Electrodesmentioning

confidence: 99%

Nanogap Electrodes towards Solid State Single‐Molecule Transistors

Cui

Dong

2015

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With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits.

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Nanoparticle single-electron transistor with metal-bridged top-gate and nanogap electrodes

Cited by 25 publications

References 17 publications

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

Nanoparticle characterization based on STM and STS

Nanogap Electrodes towards Solid State Single‐Molecule Transistors

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