The single molecular orientation switching of the Tb@C82 endohedral metallofullerene has been studied by using low-temperature ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). An octanethiol self-assembled monolayer (SAM) was introduced between Tb@C82 and the Au111 substrate to control the thermal rotational states of Tb@C82. Scanning tunneling spectroscopy (STS) of Tb@C82 on an octanethiol SAM at 13 K demonstrated hysteresis including negative differential conductance (NDC). This observed hysteresis and NDC is interpreted in terms of a switching of the Tb@C82 molecular orientation caused by the interaction between its electric dipole moment and an external electric field.

Double-gate single-electron transistors (SETs) were fabricated by chemical assembling using electroless gold-plated nanogap electrodes and chemisorbed chemically synthesized gold nanoparticles. The fabricated SET showed periodic and stable Coulomb oscillations under application of voltages of both gates. The sole SET also exhibited all two-input logic operations-XOR, XNOR, NAND, OR, NOR, and AND-with an on/off ratio of 10(2). This demonstrates the potential of chemical assembling to give highly stable SETs exhibiting all logic operations.