Logic Operations of Chemically Assembled Single-Electron Transistor

Maeda, Kazunari; Okabayashi, Norio; Kano, Shinya; Takeshita, Shuhei; Tanaka, Daisuke; Sakamoto, Masanori; Teranishi, Toshiharu; Majima, Yutaka

doi:10.1021/nn3003086

Cited by 87 publications

(101 citation statements)

References 32 publications

(63 reference statements)

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“…Metrologists have pursued electron-counting standards for capacitance [1,2] and current [3][4][5][6][7][8][9][10] since the realization of SEDs. Others have worked to perform logic or memory applications with SEDs because of the prospect for doing so at very low power [11][12][13][14]. A flurry of work has been done to make SEDs into viable qubits for solid state quantum computing [15,16].…”

Section: Introductionmentioning

confidence: 99%

Stability of Single Electron Devices: Charge Offset Drift

Stewart

Zimmerman

2016

Applied Sciences

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Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual electrons. This ability imbues SEDs with potential applications in a wide array of areas from metrology (current and capacitance) to quantum information. Success in each application ultimately requires exceptional performance, uniformity, and stability from SEDs which is currently unavailable. In this review, we discuss a time instability of SEDs that occurs at low frequency ( 1 Hz) called charge offset drift. We review experimental work which shows that charge offset drift is large in metal-based SEDs and absent in Si-SiO 2 -based devices. We discuss the experimental results in the context of glassy relaxation as well as prospects of SED device applications.

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Section: Introductionmentioning

confidence: 99%

Stability of Single Electron Devices: Charge Offset Drift

Stewart

Zimmerman

2016

Applied Sciences

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“…The tunneling rate from the source to the drain was calculated according to the orthodox theory and the tunnelling resistance. A lot of approximations are used [10][11][12][13][14][15] to improve our model. For that, we have considered a system with a double-junction.…”

Section: A Tunnel Cureent Calculationmentioning

confidence: 99%

“…Different materials have been used to realize SET devices such as metals [4], semiconductors [5], carbon nanotubes, [6], graphene [7] and single molecules [8,9]. Furthermore, SET device has been performed to obey many required applications such as logic device [10], radio−frequency [11], gas sensor [12] and single electron memory [13]. The investigated device operates on the principle of Coulomb blockade [14], which is more prominent at nanoscale.…”

Section: Introductionmentioning

confidence: 99%

Single electron transistor: energy-level broadening effect and thermionic contribution

Nasri

Boubaker

Khaldi

et al. 2017

Физика И Техника Полупроводников

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In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si−QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy−level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I−V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined.

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“…AuNP-based SETs show clear Coulomb diamonds, which can be well-characterized by the orthodox theory 19–25 . Moreover, flexible logic operations were demonstrated in chemically assembled double-gate AuNP-SETs 26 .…”

Section: Introductionmentioning

confidence: 99%

Molecular floating-gate single-electron transistor

Yamamoto

Azuma

Sakamoto

et al. 2017

Sci Rep

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We investigated reversible switching behaviors of a molecular floating-gate single-electron transistor (MFG-SET). The device consists of a gold nanoparticle-based SET and a few tetra-tert-butyl copper phthalocyanine (ttbCuPc) molecules; each nanoparticle (NP) functions as a Coulomb island. The ttbCuPc molecules function as photoreactive floating gates, which reversibly change the potential of the Coulomb island depending on the charge states induced in the ttbCuPc molecules by light irradiation or by externally applied voltages. We found that single-electron charging of ttbCuPc leads to a potential shift in the Coulomb island by more than half of its charging energy. The first induced device state was sufficiently stable; the retention time was more than a few hours without application of an external voltage. Moreover, the device exhibited an additional state when irradiated with 700 nm light, corresponding to doubly charged ttbCuPc. The life time of this additional state was several seconds, which is much shorter than that of the first induced state. These results clearly demonstrate an alternative method utilizing the unique functionality of the single molecule in nanoelectronics devices, and the potential application of MFG-SETs for investigating molecular charging phenomena.Organic molecules are ideal candidates for bottom-up electronics components because of their atomically controlled structures and functionalities [1][2][3][4] . The charge, spin, and thermal transport characteristics of individual single molecules in a molecular junction (metal-molecule-metal) have been investigated via scanning probe microscopes [5][6][7][8][9] , mechanically controllable break junctions 10,11 , and nanogap electrodes 12,13 . Although these previous studies revealed the transport mechanisms of single molecules in molecular junctions, the fabrication of single-molecular devices is still challenging. One of the main difficulties in this field is the formation of molecular junctions in solid-state device structures. Moreover, the charge states of single molecules have not been sufficiently studied for charge transport through single molecules, even though understanding them would provide significant benefits for single-molecular devices 14,15 . Chemically synthesized metal or semiconductor NPs have also attracted much attention because of their potential applications in bottom-up electronics [16][17][18] . AuNPs are ideal materials for the fabrication of Coulomb islands owing to their uniform density of states, and large charging energy. AuNP-based SETs show clear Coulomb diamonds, which can be well-characterized by the orthodox theory [19][20][21][22][23][24][25] . Moreover, flexible logic operations were demonstrated in chemically assembled double-gate AuNP-SETs 26 . Recently, we proposed a new device structure, i.e., molecular floating-gate SETs (MFG-SETs) in which individual molecules function as floating gates [27][28][29][30] . Organic molecules are smaller than typical NPs; thus, several functional molecules can be a...

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Logic Operations of Chemically Assembled Single-Electron Transistor

Cited by 87 publications

References 32 publications

Stability of Single Electron Devices: Charge Offset Drift

Stability of Single Electron Devices: Charge Offset Drift

Single electron transistor: energy-level broadening effect and thermionic contribution

Molecular floating-gate single-electron transistor

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