We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.
This paper presents a 50 Gb/s per lane hybrid BiC-MOS and silicon photonic integrated circuit for use in fiber optic communications. Fine pitch copper pillars are used to integrate electronics and silicon photonics. The resulting device demonstrates the generation and detection of up to 56 Gb/s NRZ optical signals over 2-km standard single-mode fiber at 1310-nm wavelength. At 40 Gb/s, the link operates error free, and at 56 Gb/s well below KR4 RS-FEC operating BER. The power dissipation of TX including CW laser is 600 mW (450-mW driver, 150-mW CW laser), RX is 150 mW, resulting in total per channel of less than 750 mW.
Polarization tolerant optical receiver is a key building block for the development of wavelength division multiplexing (WDM) based high-speed optical data links. However, the design of polarization independent demultiplexer (DEMUX) is not trivial. In this work, we report on the realization of a polarization tolerant arrayed waveguide grating (AWG) on a 300-mm silicon nitride (SiN) photonics platform. By introducing a series of individual polarization rotators in the middle of the waveguide array, the polarization dependence of the AWG has been substantially reduced. Insertion losses below 2.2dB and a crosstalk level better than -29dB has been obtained for TE and TM polarizations on a four channel coarse AWG. The AWG temperature sensitivity has also been evaluated. Thanks to the low thermo-optical coefficient of SiN, a thermal shift below 12pm/°C has been demonstrated.
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