A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications

Bœuf, F.; Crémer, S.; Vulliet, N.; Pinguet, Thierry; Mekis, Attila; Masini, G.; Verslegers, Lieven; Sun, Peng; Ayazi, Ali; Hon, N-K; Sahni, S.; Chi, Y.; Orlando, B.; Ristoiu, D.; Farcy, A.; Leverd, F.; Broussous, Lucile; Pelissier-Tanon, D.; Richard, C.; Pinzelli, L.; Beneyton, R.; Gourhant, Olivier; Gourvest, E.; Le-Friec, Y.; Monnier, D.; Brun, P.; Guillermet, M.; Benoît, Daniel; Haxaire, K.; Manouvrier, Jean-Robert; Jan, S.; Petiton, H.; Carpentier, J.F.; Quémerais, Thomas; Durand, C.; Gloria, D.; Fourel, Mickaël; Battegay, Frédéric; Sanchez, Y.; Batail, E.; Baron, F.; Delpech, P.; Salager, L.; Dobbelaere, P. De; Sautreuil, B.

doi:10.1109/iedm.2013.6724623

Cited by 64 publications

(34 citation statements)

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“…High responsivity and high speed operation have been demonstrated for these structures and Ge waveguide detectors are now considered as mature devices ready for production 15 . However, their sensitivity still remains low, about À 21 dBm at 14 Gbit per second (Gbps) and bit-error-rate (BER) of 10 À 12 for Ge p-i-n photodiode 16 .…”

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confidence: 99%

Germanium avalanche receiver for low power interconnects

et al. 2014

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Recent advances in silicon photonics have aided the development of on-chip communications. Power consumption, however, remains an issue in almost all integrated devices. Here, we report a 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias. The avalanche photodiode scheme requires only simple technological steps that are fully compatible with complementary metal oxide semiconductor processes and do not need nanometre accuracy and/or complex epitaxial growth schemes. An intrinsic gain higher than 20 was demonstrated under a bias voltage as low as À 7 V. The Q-factor relating to the signal-to-noise ratio at 10 Gbit per second was maintained over 20 dB without the use of a trans-impedance amplifier for an input optical power lower than À 26 dBm thanks to an aggressive shrinkage of the germanium multiplication region. A maximum gain over 140 was also obtained for optical powers below À 35 dBm. These results pave the way for low-powerconsumption on-chip communication applications.

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confidence: 99%

Germanium avalanche receiver for low power interconnects

et al. 2014

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“…Besides third window wavelengths (1490nm and 1550nm), the platform includes optical devices operating in the second window (1310nm), thus allowing backward compatibility with existing and emerging IEEE802.3 Ethernet standards. Integrated high speed Germanium photodiodes and phase modulators feature bandwidths in excess of 20GHz and 45GHz, respectively [3]. A TEM crosssection of the integrated Germanium photodiode used in the 25Gbps receiver demonstrator is shown in Fig.…”

Section: IImentioning

confidence: 99%

“…The photodiode has a 0.88A/W responsivity and a bandwidth >20GHz under 1V reverse bias, with a dark current of 100nA at 50°C. Input light is vertically coupled by means of polarization splitting grating couplers [3].…”

Section: IIImentioning

confidence: 99%

“…STMicroelectronics has recently announced its multiwavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gbps applications (PIC25G) [3]. In this paper we present a 25Gbps receiver, consisting of a PiN Germanium waveguide photodetector in PIC25G technology, interfaced through copper pillars to a 65nm CMOS amplification chain, made up of transimpedance amplifier (TIA), limiting amplifier (LA) and output buffer.…”

Section: Introductionmentioning

confidence: 99%

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A 3D-integrated 25Gbps silicon photonics receiver in PIC25G and 65nm CMOS technologies

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et al. 2014

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)

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Silicon photonics platforms are emerging as attractive solutions for low power and cost effective short/medium-reach optical interconnects. To overcome the intrinsic limitations of monolithically integrated photonics with electronics, STMicroelectronics has developed a 3D-compatible silicon photonics platform that implements in the FEOL only optical devices. Photonics Integrated Circuits are made compatible with 3D assembly of Electronic Integrated Circuits through the use of copper pillars. In this paper we present a 25Gbps Opto-Electronic receiver operating at 1310nm wavelength, consisting of an integrated waveguide Germanium photodiode interfaced by means of copper pillars to a 65nm CMOS amplification chain. The receiver demonstrates an Average Optical Power sensitivity at photodiode input, at a BER of 10 -12 , of -11.9dBm with a PRBS7 input signal, corresponding to a 97μApp TIA input current. The achieved sensitivity is ~6dB better than state-of-the-art monolithically integrated silicon photonics receivers, at comparable TIA and LA power consumption.

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“…Among the existing geometries, rib waveguide architectures are usually chosen to leverage industrial fabrication of advanced silicon based telecom and datacom photonic integrated circuits (PICs) [1][2]. The reason for this is that passive and active photonic components can readily be patterned with a single shallow-etch step using current complementary-metal-oxide-semiconductor (CMOS) fabrication techniques.…”

Section: Introductionmentioning

confidence: 99%