Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers

Marris‐Morini, Delphine; Baudot, Charles; Fédéli, Jean-Marc; Rasigade, G.; Vulliet, N.; Souhaite, A.; Ziebell, Mélissa; Rivallin, P.; Olivier, S.; Crozat, P.; Roux, Xavier Le; Bouville, David; Menezo, Sylvie; Bœuf, F.; Vivien, Laurent

doi:10.1364/oe.21.022471

Cited by 69 publications

(28 citation statements)

References 13 publications

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“…Si photonics, which can produce highly integrated photonic circuits using CMOS-compatible process, has been developed extensively toward optical interconnects [1]. Since external light sources are used in current Si photonics, Si modulators based on carrier plasma dispersion (CPD) [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20], electro-absorption [21,22], or so are necessary. The CPD in p/n diode structures is practically used in commercial modulators for optical interconnects because of the easy fabrication of the p/n junction and operation over the wide range of wavelength and temperature, which is crucial in optical interconnects.…”

Section: Introductionmentioning

confidence: 99%

“…The carrier injection gives a larger refractive index change, and its 3-dB cutoff frequency is ∼1 GHz or smaller [2] and preemphasized signals are necessary for higherspeed operation [3][4][5]. Therefore, the carrier depletion that can respond at higher speeds is often employed although the index change is smaller [6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Using resonance effects such as that in microrings is one of the methods that compensate the small index change, but its narrow band hampers to use over the wide range of temperature [4,6,7].…”

Section: Introductionmentioning

confidence: 99%

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Theoretical and experimental investigation of low-volgage and low-loss 25-Gbps Si photonic crystal slow light Machâ€“Zehnder modulators with interleaved p/n junction

et al. 2014

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In this study, we investigated the performance of Si lattice-shifted photonic crystal waveguide (LSPCW) Mach-Zehnder modulators theoretically and experimentally. The LSPCW increases the phase shift in modulator to 2.3-2.5 times higher, which allows for size reduction and high performance. On-chip passive loss was reduced to less than 5 dB by optimizing each component. We obtained 25 Gbps clear open eye and 3 dB extinction ratio at a drive voltage of 1.5-1.75 V for 200 μm phase shifter with linear p/n junction when we added a modulation loss of 7 dB. This modulation loss was reduced to 0.8 dB, maintaining other performance, by employing interleaved p/n junction and optimizing doping concentrations.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Theoretical and experimental investigation of low-volgage and low-loss 25-Gbps Si photonic crystal slow light Machâ€“Zehnder modulators with interleaved p/n junction

et al. 2014

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“…This is achieved by using an interleaved p-n junction, which varies periodically along the propagation direction of the optical wave. While previous studies of MZ modulators with either slow light [27][28][29] or with interleaved p-n junctions [30][31][32][33] have been reported, the focus here is the synergic use of both concepts. The combination of slow light and interleaved p-n junction is shown here to yield a modulation efficiency that is considerably improved with respect to standard modulators or to the use of both effects alone, while retaining a wide bandwidth that is essential for optical communication.…”

Section: Introductionmentioning

confidence: 99%

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

et al. 2019

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Slow light is a very important concept in nanophotonics, especially in the context of photonic crystals. In this work, we apply our previous design of band-edge slow light in silicon waveguide gratings [M. Passoni et al, Opt. Express 26, 8470 (2018)] to Mach-Zehnder modulators based on the plasma dispersion effect. The key idea is to employ an interleaved p-n junction with the same periodicity as the grating, in order to achieve optimal matching between the electromagnetic field profile and the depletion regions of the p-n junction. The resulting modulation efficiency is strongly improved as compared to common modulators based on normal rib waveguides, even in a bandwidth of 20-30 nm near the band edge, while the total insertion loss due to free carriers is not increased. The present concept is promising in view of realizing slow-light modulators for silicon photonics with reduced energy dissipation.

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“…Optoelectronic devices for integrated transceivers including sources, modulators and detectors are the subjects of intense research. Silicon modulators based on carrier depletion Manuscript have recently achieved high performances such as 40 Gb/s operation with high extinction ratio (ER) and low loss [3]. Silicon Mach Zehnder modulators are interesting for telecommunication applications but their energy consumption of a few pJ/bit is prohibitive for inter-and intra-chip optical communications.…”

Section: Introductionmentioning

confidence: 99%

Advances Toward Ge/SiGe Quantum-Well Waveguide Modulators at 1.3μm

Rouifed

Marris‐Morini

Chaisakul

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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The paper reports on the developments of Ge/SiGe quantum well (QW) waveguide modulators operating at 1.3 μm. Two modulator configurations have been studied: The first one is based on QW structures grown on a 13-μm SiGe buffer on bulk silicon. Light was directly coupled and propagated in Ge/ Si 0 .35 Ge 0 .65 QWs. Using a 3-μm-wide and 50-μm-long modulator, an extinction ratio (ER) up to 6 dB was obtained at 1.3 μm. In the second configuration, the aim is to integrate Ge/SiGe QW on standard silicon-on-insulator (SOI) waveguides. A reduction of buffer thickness is then required to allow the light coupling from Si waveguide to Ge/SiGe QW. To this purpose, first we demonstrated QCSE with a thin (360-nm-thick) Si 0 .08 Ge 0 .92 buffer on silicon using the well-known Ge/Si 0 .15 Ge 0 .85 QWs (operated at a wavelength of 1.4 μm). Based on these promising experimental results, we theoretically investigated properties of a Ge/Si 0 .65 Ge 0 .35 QW modulator integrated on SOI waveguides. 7.7 dB ER were predicted with 4 dB optical insertion loss and an estimated energy consumption of 59 fJ/bit for a modulator length as short as 69 μm.Index Terms-Modulation, quantum wells, Ge/SiGe, waveguide integration.

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Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers

Cited by 69 publications

References 13 publications

Theoretical and experimental investigation of low-volgage and low-loss 25-Gbps Si photonic crystal slow light Machâ€“Zehnder modulators with interleaved p/n junction

Theoretical and experimental investigation of low-volgage and low-loss 25-Gbps Si photonic crystal slow light Machâ€“Zehnder modulators with interleaved p/n junction

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

Advances Toward Ge/SiGe Quantum-Well Waveguide Modulators at 1.3μm

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