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The effect of ultrasound on the pseudo-solubility of nitrogen in water and on gas-liquid mass transfer kinetics has been investigated in an autoclave reactor equipped with a gas induced impeller. In order to use organic liquids and to investigate the effect of pressure, gas-liquid mass transfer coefficient was calculated from the evolution of autoclave pressure during gas absorption to avoid any side-effects of ultrasound on the concentrations measurements. Ultrasound effect on the apparent solubility is very low (below 12%). Conversely ultrasound greatly improves gas-liquid mass transfer, especially below gas induction speed, this improvement being boosted by pressure. In typical conditions of organic synthesis: 323 K, 1100 rpm, 10 bar, k(L).a is multiplied by 11 with ultrasound (20 kHz/62.6 W). The impact of sonication is much higher on gassing out than on gassing in. In the same conditions, this enhancement is at least five times higher for degassing.

Extending the detection limit of dopants for focused ion beam prepared semiconductor specimens examined by off-axis electron holography

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We have studied the strain state, film and surface morphology of SiGe virtual substrates grown by reduced pressure chemical vapour deposition (RP-CVD). The macroscopic strain relaxation and the Ge composition of those virtual substrates have been estimated in high resolution x-ray diffraction, using Omega-2Theta scans around the (004) and (224) orders. Typically, linearly graded Si 0.7 Ge 0.3 virtual substrates 5 µm thick are 96% relaxed. From transmission electron microscopy, we confirm that the misfit dislocations generated to relax the lattice mismatch between Si and SiGe are mostly confined inside the graded layer. The threading dislocations density obtained for Ge concentrations of 20% and 27% is indeed typically of the order of (7.5 ± 2.5) ×10 5 cm −2 . The surface roughness of the relaxed SiGe virtual substrates increases significantly as the Ge concentration approaches 30%. We find for the technologically important Ge concentration of 30% a surface root mean square roughness of 5 nm, with an undulation wavelength for the cross-hatch of the order of 1 µm. We have also studied the electronic quality of our RP-CVD grown SiGe virtual substrates. We have grown a MODFET-like heterostructure for this purpose, with a buried tensile-strained Si channel 8 nm thick embedded inside SiGe 31%. We have obtained a well-behaved two-dimensional electron gas in the Si channel, with electron sheet densities and mobilities at 1.45 K of 5.7 × 10 11 cm −2 and 180 000 cm 2 V −1 s −1 , respectively.

Quantitative determination of dose and junction depth in the source/drain region of future CMOS devices (typically 50 nm for the contact and 25 nm for the extension) requires SIMS instruments capable of measuring dopant profiles with high depth resolution and low detection limits. In this work we investigate the analytical usefulness of monitoring MCs 2 + ions for semiconductor profiling of n-type dopants such as P, Ge or As with a primary (Cs + beam) impact energy of 1 keV on a SIMS Cameca IMS-5f instrument. The results obtained on ultrashallow implants in Si and SiO 2 indicate an improvement in the characterization by using the MCs 2 + technique; this technique has the advantage over the MCs + technique of providing higher useful yields for electronegative elements by up to 10 2 and can therefore be applied to perform more precise junction measurements in terms of concentration, dose, decay length and detection limit.