SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs₂⁺ ions

Abstract

Quantitative determination of dose and junction depth in the source/drain region of future CMOS devices (typically 50 nm for the contact and 25 nm for the extension) requires SIMS instruments capable of measuring dopant profiles with high depth resolution and low detection limits. In this work we investigate the analytical usefulness of monitoring MCs 2 + ions for semiconductor profiling of n-type dopants such as P, Ge or As with a primary (Cs + beam) impact energy of 1 keV on a SIMS Cameca IMS-5f instrument. The results obtained on ultrashallow implants in Si and SiO 2 indicate an improvement in the characterization by using the MCs 2 + technique; this technique has the advantage over the MCs + technique of providing higher useful yields for electronegative elements by up to 10 2 and can therefore be applied to perform more precise junction measurements in terms of concentration, dose, decay length and detection limit.

Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors

“…Cs + primary ions were used for germanium depth profiling, with an impact energy of 1 keV. The atomic masses monitored were those of Cs 2 Si + (133 Â 2+28=294 amu) and Cs 2 Ge + (133 Â 2+70=336 amu) [27]. The X-ray diffraction (XRD) measurements were performed on a Philips high resolution diffraction (X'Pert MRD) system at the Cu Ka1 wavelength of 1.5406 ( A.…”

Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors

“…Cs + primary ions were used for silicon and germanium depth profiling, with an impact energy of the order of 1 keV. The atomic masses monitored were those of Cs 2 Si + (133 Â 2 þ 28 ¼ 294 amu) and Cs 2 Ge + (133 Â 2 þ 70 ¼ 336 amu) [13]. Tapping-mode atomic force microscopy (AFM) images were acquired on a DI 3100 tool.…”

Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe

“…The relative sensitivity factors (RSFs) of C, O and F in Si [22] were used to convert the Cs 2 C + , Cs 2 O + and Cs 2 F + secondary ions [23] detected by the magnetic sector mass spectrometer of the SIMS apparatus into C, O and F atomic concentrations. The Cs 2 Ge + signal conversion into a Ge atomic concentration was such that a perfect matching between SIMS and XRD data occurred away from the sSi layer.…”