Medium resolution off-axis electron holography with millivolt sensitivity

Cooper, David; Truche, R.; Rivallin, P.; Hartmann, Jean‐Michel; Laugier, F.; Bertin, F.; Chabli, Amal; Rouvière, Jean-Luc

doi:10.1063/1.2794006

Cited by 73 publications

(33 citation statements)

References 6 publications

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“…The number of electrons per pixel in a recorded electron hologram is usually at least 100-500 for an acquisition time of 2-8 sec. If the biprism wire and the specimen are stable enough, then a longer acquisition time can be used (Cooper et al, 2007). Furthermore, if two or more biprisms are used simultaneously, then there is more flexibility to control the overlap width, interference fringe spacing and biprism rotation angle independently, as well as to eliminate Fresnel fringes from the recorded image wave (Harada et al, 2006).…”

Section: Interference Fringe Visibilitymentioning

confidence: 99%

Electron Holography of Magnetic Materials

Kasama¹,

Dunin‐Borkowski²,

Beleggia³

2011

Holography - Different Fields of Application

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Section: Interference Fringe Visibilitymentioning

confidence: 99%

Electron Holography of Magnetic Materials

Kasama¹,

Dunin‐Borkowski²,

Beleggia³

2011

Holography - Different Fields of Application

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“…In addition, the phase reconstruction procedure includes a low-pass window function which further deteriorates the reachable phase resolution for a certain spatial resolution [49]. In literature, a decrease of the signal-to-noise ratio (SNR) by roughly one order of magnitude was reported for medium (spatial) resolution holography [50]. The present off-axis holograms show around 2500 counts per pixel (respectively 125 electrons per pixel) and a contrast of 13.8 %.…”

Section: Analysis Of Resolution With Respect To Electronic Characterimentioning

confidence: 97%

Assessment of off-axis and in-line electron holography for measurement of potential variations in Cu(In,Ga)Se2 thin-film solar cells

Keller

Buecheler

Reinhard

et al. 2016

Adv Struct Chem Imag

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Electron holography is employed to study variations of the electrostatic crystal potential in Cu(In,Ga)Se 2 (CIGS) thin-film solar cells at different length scales: Long-range potential variations across the layer structure of the solar cell as well as inhomogeneities within the layers are analyzed by off-axis holography. In-line holography is applied to examine the local potential variation across a CIGS grain boundary. The phase reconstruction from a focal series is performed by a modified transport of intensity equation (TIE) which is optimized to reduce common artifacts. For comparison, three different microscopes of different optical configurations were used for in-line holography. Based on the results, the impact of the used microscope as well as further acquisition parameters on the in-line holography measurement is assessed. The measured potential variations are discussed considering the effect of different possible sources that may cause potential fluctuations. It is found that most of the variations are best explained by mean inner potential fluctuations rather than by inhomogeneities of the electronic properties. Finally, the present resolution limit of both methods is discussed regarding the feasibility of future electronic characterization of CIGS by holography.

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“…Although the spatial resolution in this operating mode can in principle be improved to $ 4 nm at the expense of fringe contrast and the number of counts recorded, in this experiment the settings were chosen to optimise the field of view. The mechanical and electrical stability of the Titan allowed individual electron holograms to be acquired for time periods of a minute or more, leading to reconstructed phase images with excellent signal-to-noise ratios [17].…”

Section: Article In Pressmentioning

confidence: 99%