Silicon p-n junction specimens with a range of dopant concentrations have been prepared using focused ion beam milling for examination by off-axis electron holography. Here we show that phenomenon such as the electrically “inactive” thickness is strongly dependent on the dopant concentration of the specimens. We also show a dependence on both the specimen geometry and intensity of the electron beam on the phases measured across the junctions and a good reproducibility of results if care is taken during examination.
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