Silicon Photonics R&amp;D and Manufacturing on 300-mm Wafer Platform

Bœuf, F.; Crémer, S.; Temporiti, Enrico; Feré, M.; Shaw, Mark; Baudot, Charles; Vulliet, N.; Pinguet, Thierry; Mekis, Attila; Masini, G.; Petiton, H.; Maître, Patrick Le; Traldi, Matteo; Maggi, Luca

doi:10.1109/jlt.2015.2481602

Cited by 103 publications

(59 citation statements)

References 16 publications

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“…The photo-receiver (RX) itself consists of a PIN photodiode with responsivity η OE = 0.9 A/W, analogue bandwidth BW PD = 21 GHz, a Trans-Impedance Amplifier (TIA) gain of 1 kΩ and a Noise Equivalent Power (NEP) of 8 pW/ √ GHz. These RX parameters are typical for 25 Gbps systems [12] and, as will be evident later, do not change the generality of the results or of the proposed method. The transmission quality is evaluated by means of the Q-factor with patterning effects of the two nearest neighboring bits being taken into account in the calculation [13].…”

Section: Simulation Of the Input Power Required P Reqmentioning

confidence: 76%

Optimization of Silicon MZM Fabrication Parameters for High Speed Short Reach Interconnects at 1310 nm

et al. 2016

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Abstract:Optical modulators are key components to realize photonic circuits, and Mach-Zehnder modulators (MZM) are often used for high speed short reach interconnects. In order to maximize the tolerable path loss of a transmission link at a given bitrate, the MZM needs to be optimized. However, the optimization can be complex since the overall link performance depends on various parameters, and, for the MZM in particular, implies several trade-offs between efficiency, losses, and bandwidth. In this work, we propose a general and rigorous method to optimize silicon MZM. We first describe the optical link, and the numerical method used for this study. Then we present the results associated to the active region for 1310 nm applications. An analytical model is generated, and allows us to quickly optimize the p-n junction depending of the targeted performances for the MZM. Taking into account the required optical link parameters, the maximum tolerable path losses for different length of MZM is determined. By applying this method, simulations show that the optimum MZM length for 25 Gbps applications is 4 mm with an efficiency of 1.87 V·cm, 0.52 dB/mm of losses. A tolerable path loss of more than 25 dB is obtained.

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Section: Simulation Of the Input Power Required P Reqmentioning

confidence: 76%

Optimization of Silicon MZM Fabrication Parameters for High Speed Short Reach Interconnects at 1310 nm

et al. 2016

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“…The two configurations differ mainly for the silicon thickness in the etched cladding regions, t: the first structure has t = 150 nm and is named SLOW150, while the second structure has t = 50 nm and is denoted as SLOW50. These values correspond to common technology platforms for optical interconnects [34]. To lock the lowest band edge at λ = 1.3 μm, the period has to be fixed as a = 218.1 nm and a = 234.7 nm for SLOW150 and SLOW50 configurations, respectively.…”

Section: Slow Light In Silicon Waveguide Gratingsmentioning

confidence: 99%

“…The combination of slow light and interleaved p-n junction is shown here to yield a modulation efficiency that is considerably improved with respect to standard modulators or to the use of both effects alone, while retaining a wide bandwidth that is essential for optical communication. The designed structure fulfills the required constraints for fabrication on industrial technology platforms [34], and may be suitable for the realization of MZ modulators with reduced energy dissipation.…”

Section: Introductionmentioning

confidence: 99%

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

et al. 2019

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Slow light is a very important concept in nanophotonics, especially in the context of photonic crystals. In this work, we apply our previous design of band-edge slow light in silicon waveguide gratings [M. Passoni et al, Opt. Express 26, 8470 (2018)] to Mach-Zehnder modulators based on the plasma dispersion effect. The key idea is to employ an interleaved p-n junction with the same periodicity as the grating, in order to achieve optimal matching between the electromagnetic field profile and the depletion regions of the p-n junction. The resulting modulation efficiency is strongly improved as compared to common modulators based on normal rib waveguides, even in a bandwidth of 20-30 nm near the band edge, while the total insertion loss due to free carriers is not increased. The present concept is promising in view of realizing slow-light modulators for silicon photonics with reduced energy dissipation.

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“…Significant research effort has been dedicated over the past years to the development of silicon-based photonic technologies [1][2]. Developing high performance silicon modulators based on the free-carrier plasma dispersion (FCPD) effect has been an important milestone.…”

Section: Introductionmentioning

confidence: 99%