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To solve the problem of conductivity-type inversion in wide band gap II-VI compounds the thermodynamical analysis of intrinsic point defects has been performed. The existence of certain critical temperature of heat treatment in equilibrium conditions is shown. Above this temperature it is impossible to obtain the samples with stoichiometry deviation toward non-metals. At the temperatures lower than T c , the diffusion processes in crystals are retarded and the equilibrium between II-VI crystals and B component vapour cannot be established (B is a component of a binary compound AB). Thus, it is shown that under thermodynamical equilibrium conditions it is impossible to obtain wide band gap II-VI compounds of p-type conductivity.

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The thermal conductivity of Ge doped with electroneutral impurities, Si, Sn and the acceptor impurity, Al, is investigated in the temperature range 80 to 400 K. It is established that at equal impurity concentrations the temperature dependence of the thermal conductivity in Ge doped with the electroactive impurity Al, is weaker than in Ge doped with electroneutral impurities, Si and Sn. The effect of impurity concentration on the additional thermal resistance at T = 300 K is described by the expression δW ∼ cn, where n ≈ 0.5 for all systems Ge:Si, Ge:Sn, Ge: Al investigated. The results obtained are analysed on the basis of existing theories on thermal conductivity.

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