Thermoelectric power in semiconducting alloys of the InPxAs 1-x system

Kekelidze, N.; Kvinikadze, Z. V.

doi:10.1051/jphys:01975003609088300

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…In addition, the data on the specific heat conductivity a r e assumed to be higher. More detailed results of investigations on n-type materials are given in (3,4). As concerns p-InP As solid solutions it must be noted that the data on thermoelectric properties are almost not available in literature.…”

Section: Studies Of Thermoelectric Characteristics Of Inpmentioning

confidence: 99%

Studies of thermoelectric characteristics of InPxAs1−x alloys

Kekelidze

Kvinikadze

Davitaya

et al. 1976

Phys. Stat. Sol. (a)

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Despite the considerable scientific and practical interest from the point of view compounds have been studied insufficiently so far. cm were of thermoelectricity, InP As In (1) only some alloy compositions with electron concentration n * 10 studied; in addition, the specimens were two-phase systems. In (2) the electron concentration range n for some alloy compositions a r e given and information on the thermoelectric effectiveness is not available, which, of course, gives an incomplete pattern of the propertiee of the materials of the given system. In addition, the data on the specific heat conductivity a r e assumed to be higher. More detailed results of investigations on n-type materials are given in (3, 4). As concerns p-InP As solid solutions it must be noted that the data on thermoelectric properties are almost not available in literature. 17-3 x 1-x -3 1016told8 cm was investigated, but in this case only datax 1-xWe have carried out a complex investigation of the thermoelectric and thermal properties of the semiconducting solutions of the InP-InAs system with n-and p-type conductivity. The study was carried out in a wide range of temperatures (80 to 900 K) and free carrier concentrations. Practically all intermediate compositions of n-type materials were studied, including the end components InAs, InP as well as p-type solid solutions of the following compositions: x = 0, 0.1, 0.2. 0.3. 0.6, 1. The specimens studied were perfect and homogeneous. The required alloy homogeneity was achieved by means of cyclic zone passages and repeated annealing and was checked by the micro-X-ray analyzer MAP-1.As a result of the study of resistivity e , thermoelectric power a , and specific heat conductivity 1~ of p-type materials, it was established that going from InAs to InP and with increasing hole concentration the region of intrinsic conductivity (as in the case of the n-type materials) and the u sign reversal point are shifted to higher temperatures (Fig. 1). The coefficient of thermoelectric effectiveness has 4 physica (a)

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Section: Studies Of Thermoelectric Characteristics Of Inpmentioning

confidence: 99%

Studies of thermoelectric characteristics of InPxAs1−x alloys

Kekelidze

Kvinikadze

Davitaya

et al. 1976

Phys. Stat. Sol. (a)

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“…It is shown that in In 1-x Ga x As system at high charge carrier concentrations the theory dealing with the change of the Seebeck coefficient depending on temperature is in good agreement with the experiment. In the InP x As 1-x system the increase of the thermoelectric power (α) with temperature indicates that the material becomes nondegenerate and in the InAs x Sb 1-x system the decrease of α for a given x with increasing the charge carrier concentration is conditioned by the movement of the Fermi level upwards [2,6]. The experimental data [3] on the thermoelectric power of In 1-x Ga x As solid solutions depending on the composition and temperature are in agreement with the theory [1].…”

Section: Introductionmentioning

confidence: 99%

“…Under the InP x As 1-x solid solution electron and neutron irradiation the thermoelectric efficiency of the materials increased. In particular, these solid solutions, rich in indium phosfide, irradiation leads to the approximately double increase of the thermoelectric power and points to the possibility of improving material characteristic on irradiation [2,5,7,8].…”

Section: Introductionmentioning

confidence: 99%

Thermoelectrical properties of In_1‐xGa_xAs and InAs crystals irradiated with fast electrons

Aliyev

Рашидова

Aliyev

et al. 2004

Cryst. Res. Technol.

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The thermoelectric power in In 1-x Ga x As (x=0,01;0,04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 10 16 -2x10 17 el/cm -2 on the interval 80-400K have been investigated. It is revealed that in the all crystals the value of the thermoelectric power is decreased under irradiation that resulted from the growth of the free electron concentration to form radiation induced defects of the donor type. It has been determined that in the initial InAs after irradiation, the charge carriers scatter on optical phonons and in In 1-x Ga x As solid solutions they do on optical phonons and ionized impurities.

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InP(x)As(1-x), physical properties

Landolt-Börnstein - Group III Condensed Matter

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Thermoelectric power in semiconducting alloys of the InPxAs 1-x system

Cited by 5 publications

References 7 publications

Studies of thermoelectric characteristics of InPxAs1−x alloys

Studies of thermoelectric characteristics of InPxAs1−x alloys

Thermoelectrical properties of In_1‐xGa_xAs and InAs crystals irradiated with fast electrons

InP(x)As(1-x), physical properties

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Thermoelectric power in semiconducting alloys of the InPxAs 1-x system

Cited by 5 publications

References 7 publications

Studies of thermoelectric characteristics of InPxAs1−x alloys

Studies of thermoelectric characteristics of InPxAs1−x alloys

Thermoelectrical properties of In1‐xGaxAs and InAs crystals irradiated with fast electrons

InP(x)As(1-x), physical properties

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Thermoelectrical properties of In_1‐xGa_xAs and InAs crystals irradiated with fast electrons