Thermoelectrical properties of In_1‐xGa_xAs and InAs crystals irradiated with fast electrons

Abstract

The thermoelectric power in In 1-x Ga x As (x=0,01;0,04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 10 16 -2x10 17 el/cm -2 on the interval 80-400K have been investigated. It is revealed that in the all crystals the value of the thermoelectric power is decreased under irradiation that resulted from the growth of the free electron concentration to form radiation induced defects of the donor type. It has been determined that in the initial InAs after irradiation, the charge carriers scatter on optical phonons and in In 1-x Ga x As solid solutions they do on optical phonons and ionized impurities.

Temperature dependence of optical absorption in In1-xGaxAs solid solutions

“…The relative error of alloy composition determination was not higher than 2%, and the error of electro physical parameter determination runs between 5% and 7%. The qualitative analysis of the solid solution studies has shown sufficiently microhomogencity (up to 1µm) throughout the sample surface [2][3][4]7].…”

“…The existence of the chemical disorder in In 1-x Ga x As is apparent in the transport properties as an additional scattering mechanism of the current carriers [1][2][3][4][5][6][7]. The chemical disorder may generate local fluctuations of molar fraction, which cause a local change of the band-edge energy and the effective mass of the current carriers [8][9][10].…”