The thermoelectric power in In 1-x Ga x As (x=0,01;0,04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 10 16 -2x10 17 el/cm -2 on the interval 80-400K have been investigated. It is revealed that in the all crystals the value of the thermoelectric power is decreased under irradiation that resulted from the growth of the free electron concentration to form radiation induced defects of the donor type. It has been determined that in the initial InAs after irradiation, the charge carriers scatter on optical phonons and in In 1-x Ga x As solid solutions they do on optical phonons and ionized impurities.
The thermoelectric power in In 1−x Ga x As (x = 0.01; 0.04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 2 × 10 17 electrons per cm 2 at temperature 300 K has been investigated.
Absorption spectra near the fundamental absoption edge of n-type of In 1-x Ga x As are studied. The temperature coefficient of the In 1-x Ga x As energy gap, dE g /dT, has been obtained and compared with calculated data. An exponential dependence of the absorption coefficient on photon energy has been found. The slope of the exponential absorption curve is discussed.
This work presents an overview of research results in magnetic and magnetostrictive properties of rare earths-based intermetallic compounds conducted by Russian and foreign researchers. A special attention is paid to multicomponent alloys, as variation in component concentration, temperature and external fields allows for successful influence over the exchange interaction, thus leading to unique phenomena in the area of phase transformations.
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