The thermal conductivity of Ge doped with electroneutral impurities, Si, Sn and the acceptor impurity, Al, is investigated in the temperature range 80 to 400 K. It is established that at equal impurity concentrations the temperature dependence of the thermal conductivity in Ge doped with the electroactive impurity Al, is weaker than in Ge doped with electroneutral impurities, Si and Sn. The effect of impurity concentration on the additional thermal resistance at T = 300 K is described by the expression δW ∼ cn, where n ≈ 0.5 for all systems Ge:Si, Ge:Sn, Ge: Al investigated. The results obtained are analysed on the basis of existing theories on thermal conductivity.
Using the Mössbauer spectroscopy method for the 119Sn isotope, the state of tin impurity atoms is studied in silicon, germanium, and silicon—germanium solid solutions over a temperature range 89 to 1000 K. The samples are doped either by means of diffusion annealing at 1200 °C for silicon and 870 °C for germanium, or in the process of crystal pulling from a melt. If tin concentration does not exceed 2 × 1019 cm−3, it enters the matrix lattice substitutionally, forming a system of sp3 hybrid chemical bonds. A model, describing tin impurity atom as an isotopic impurity, is discussed. If tin concentration exceeds the above value, associates of tin impurity atoms are formed in the structure of the doped semiconductors.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.