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Deep centres of the ZnS: C1 single crystals are investigated by the method of impurity electroabsorption (IEA) and photoconductivity (PhC). I n accordance with estimations fulfilled a number of the levels obtained are ascribed to Vin; (VznCls)' and Vin and also t o (VznGazn)', whose energy levels are obtained in a previous paper. In the induced IEA spectrum two fixed peaks are found whose satellite displacements A are described by different dependences on the modulating voltage U, namely A -U1/3 and -U W . This is apparently caused by the nature of centres responsible for the observed structures in the IEA spectra.B pa6o~e HCCJXeAyIOTCH rnyboKEIey pOBHX B MOHOKpMCTaJIJIaX ZnS: c1 MeTOAaMH IIpEIMeCHOrO 3JIeKTpOIIOrJlOIUeHHFi (n3n) EI @OTOIIpOBOAUMOCTH (Qn). no PeayJIb-TaTaM H3MePeHFln OIIpeneJleH 3HepreTMqeCKHfi CneKTp rny60mx ypofjaefi. COrJlaC-HO IIpOBeneHHbIM OUeHKaM, pfin IIOJlyWHHhIX YpOBHefi npMnHCaH Vzn; (VznCls)' EI viu, a TaKWe (VznGazn)', 3HepreTWfeCHH8 YpOBeHb KOTOpOrO nOJlyseH B IIpeAbIny-Uefi pa6ol.e. B CneKTpe IIHLfYUApOBaHHOrO n3n 0 6~a p y w e~b 1 ABa HeIIOABHHWbIX IIEIKB, CMeweHHFi CaTeJIJIHTOB KOTOPbIX A OIIHCbIBaIOTCFi pa3HbIMH 3aBBEICHMOCTIIMA 06yCJXOBJXeHO IIpHpOLfOfi qeHTPOB, OTBeTCTBeHBbIX 38 Ha6~1KmaeMbIe OCO6eHHOCTH OT MoRynHpyIowero Hanpmmmsr, a xiMeHHo A -Ull3 EI -U213, TO, IIO-BK~WOMY, B cnempax n3n.

Results of a study of photoluminescence of two groups(A and B) of non‐intentionally doped InP single crystals with different Hall mobilities (μA = 3 × 103 cm2/Vs, μB = 1.5 × 104 cm2/Vs) and degenerated InP: Te samples are presented. The near‐band‐edge emission spectra of B‐group and InP:Te crystals are found to be similar, this seems to be due to the presence of local regions with increased residual impurity concentration in B‐group crystals. Investigations of several thermal treatments and of the influence of phosphorus and argon ion implantation on the radiative properties of the crystals allow to confirm that centres involving the phosphorus vacancy, VP, and phosphorous interstitial, Pi, are responsible for the photoluminescence bands at 1.08 and 1.21 eV, respectively. The possible nature of other radiative recombination centres in indium phosphide is discussed.

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