Electrical and optical properties of inas and inp compounds irradiated with 50 mev electrons

Kekelidze, N.

doi:10.1080/00337577708237465

Cited by 7 publications

(7 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As can be seen from figure irradiation dose 10 17 el/cm 2 (centimeter) conductivity decreases the slope of the curve disappears completely. But on the second stage of irradiation, the dose D = 2 × 10 17 el/cm 2 (centimeter) reduce conductivity increases, observed the minimum (curve 3) at a temperature of 170 K -180 K. This is probably due to the deep-lying levels of radiation defects caused by irradiation [3] which compensates for the electrical conductivity of the crystal. At higher temperatures about 180 K electronic traps are exempt.…”

Section: Results and Their Discussionmentioning

confidence: 95%

The Conductivity of Indium Phosphide Irradiated by Fast Electrons

Rashidova¹

2013

JMP

View full text Add to dashboard Cite

In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 10 17 el/cm 2 (centimeter) and 2 × 10 17 el/cm 2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300˚C that binds accumulating radiation defects.

show abstract

Section: Results and Their Discussionmentioning

confidence: 95%

The Conductivity of Indium Phosphide Irradiated by Fast Electrons

Rashidova¹

2013

JMP

View full text Add to dashboard Cite

show abstract

“…The mobility variation can be described [13,141 by polarization effects. The calculations were made from the results of p-measurements of the 50 MeV electron irradiated sample after point RD annealing (cuve 6) in terms of the polarization model assuming that the Fermi level in the cluster cores coincides with the Fermi level "limiting" position at electron irradiation, Egc = E , + 0.33 eV. It was found that one 50 MeV electron creates 1 x 10-8 defect clusters with average radius of the space charge region of = 1100 8.…”

Section: The Annealing Of Defectsmentioning

confidence: 99%

“…In [4] the high mobility of the primary RD in n-InP crystals was established. In [5,6] some results on the electrical and optical properties of n-InP crystals irradiated by 50MeV electrons and fast neutrons are presented.…”

Section: Introductionmentioning

confidence: 99%

Radiation defects in electron-irradiated InP crystals

Brailovskii

Karapetyan

Мегела

et al. 1982

phys. stat. sol. (a)

View full text Add to dashboard Cite

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n‐InP and the reverse annealing in p‐InP are observed at 77 to 300 K. Pour annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defects defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres Ec — 0.2 eV. The “limiting” position of the Fermi level in electron irradiated InP crystals is discussed.

show abstract

“…The unique radiation properties of InAs, which are strictly opposed to InP according [3]- [6] in terms of formation of radiation defects, have led us to the idea of creating electrical and optical radiation-tolerant semiconductor materials on the base of InPxAs1-x alloys.…”

Section: Introductionmentioning

confidence: 99%

InPAs Alloys Use for Electrical Engineering in Hard-radiation Environment

Khutsishvili¹,

Kekelidze²,

Qamushadze³

et al. 2021

EJERS

View full text Add to dashboard Cite

Effective functioning of electronics in high- radiation environment requires developing of novel semiconductor systems with radiation-tolerant properties. In given work, in search of semiconductor materials with immunity to radiation, investigations have been focused on InPxAs1-x alloys. Investigating of electrical and optical characteristics and physical processes, flowing in heavily irradiated InPxAs1-x alloys under high fluences of high-energy electrons and fast neutrons, let us create new generation of radiation-resistant semiconductor materials for electrical engineering application in hard-radiation environment.

show abstract

Electrical and optical properties of inas and inp compounds irradiated with 50 mev electrons

Cited by 7 publications

References 13 publications

The Conductivity of Indium Phosphide Irradiated by Fast Electrons

The Conductivity of Indium Phosphide Irradiated by Fast Electrons

Radiation defects in electron-irradiated InP crystals

InPAs Alloys Use for Electrical Engineering in Hard-radiation Environment

Contact Info

Product

Resources

About