Radiation defects in electron-irradiated InP crystals

Abstract

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n‐InP and the reverse annealing in p‐InP are observed at 77 to 300 K. Pour annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defects defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres Ec — 0.2 eV. The “limiting” position of the Fermi level in electron irradiated InP crystals is discussed.