Scattering of charge carriers by tin impurities in polycrystalline Si-Ge alloys

Khutsishvili, Elza; Kekelidze, N.; Jzhakeli, V. G.; Pagava, M. O.

doi:10.1134/s0020168506040029

Cited by 1 publication

(3 citation statements)

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“…4). It has been selected from experimental mobility the component of mobility, connected with scattering of carriers upon the atoms of Ge (U Ge ) in Si, and compared with Erginsoy model [9], considering Ge atoms as neutral centers.…”

Section: Methodsmentioning

confidence: 99%

“…where, U L and U I are the components related to the lattice vibrations and ionized impurity scattering respectively, U dis is the component related to disorder scattering and F is a correction factor which takes into account the combined effect of different scattering processes [9]. We carried out appropriate analysis of the mobility on the basis of reasonable theories.…”

Section: Methodsmentioning

confidence: 99%

“…Incidentally for thermoelectric and microelectronic applications of SiGe alloys among transport properties electrical conductivity and Hall effect, specifically carriers mobility, are the most necessary parameters in comparison with their other basic characteristics. The results of articles [6][7][8][9] have shown, that scattering processes of current carriers in semiconductor SiGe alloys are more complicated, than it was accepted and requires further investigation. From the above-mentioned it follows that the problem of obtaining and investigating single crystals of SiGe alloys is extremely actual today.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Properties and Crystal Perfection of the n-Type Si-rich SiGe Alloys Bulk Single-Crystals

Khutsishvili¹,

Khutsishvili²,

Kvirkvelia³

et al. 2015

JEE

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Electrical properties and crystal perfection of undoped and n-type heavily arsenic-doped the Si-rich SiGe alloys bulk single-crystals were investigated. Influence of Ge atoms and doping by As on electrical properties and crystal perfection of SiGe alloys in the composition range 0-3at%Ge are reported. It was established, that carriers mobility in heavily impurity doped n-type Si-rich SiGe alloys is significantly lower, than in undoped alloys. It does not depend on the Ge concentration and is defined by carriers scattering upon impurity ions. It was established, that Ge atoms do not scatter as neutral centers. The mobility, related to the carriers scattering upon Ge atoms, can be explained in terms of "alloy" scattering. Investigation has shown that increasing of Ge content in Si increases dislocations density and disturbs their homogeneous distribution. The disturbance of homogeneous distribution of dislocations increases with increasing of Ge concentration. But dislocation structure is not revealed in heavily doped n-SiGe alloy crystals. Thus dilute heavily impurity-doped with arsenic SiGe alloys are similar to impurity-doped n-Si.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%