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We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on twodimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson equation including the Site-Binding model and the Gouy-Chapman-Stern approach, while the carrier transport is described by the drift-diffusion theory. The proposed model is provided in an analytical form and then implemented in Verilog-A, making it compatible with standard technology computer-aided design tools employed for circuit simulation. The model is benchmarked against two experimental transition-metal-dichalcogenide (MoS2 and ReS2) based ion sensors, showing excellent agreement when predicting the drain current, threshold voltage shift, and current/voltage sensitivity measurements for different pH concentrations.

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This paper presents a computationally efficient physics‐based compact model for the Schottky barrier CNTFET. This compact model captured a number of features exhibited by these transistors such as ballistic transport and channel potential variation with respect to channel charge. Also quantum capacitance is pointed out. A new analytical model of the channel charge is presented here. The compact model accuracy is verified within its range of validity. To investigate on the SB influence, two classical circuit applications are simulated; the logical inverter and the 5 stages ring oscillator (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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