2013 8th International Conference on Design &Amp; Technology of Integrated Systems in Nanoscale Era (DTIS) 2013
DOI: 10.1109/dtis.2013.6527776
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Low noise high frequency CNTFET amplifier

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Cited by 7 publications
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“…The dimensional criticality in the silicon material reduced the utilization level for the transistor fabrication [10]. Hence, the research studies focused on the identification of alternatives to improve the density and recital of electronic information system [11]. The gate terminal controls the current intensity [12].…”
Section: Introductionmentioning
confidence: 99%
“…The dimensional criticality in the silicon material reduced the utilization level for the transistor fabrication [10]. Hence, the research studies focused on the identification of alternatives to improve the density and recital of electronic information system [11]. The gate terminal controls the current intensity [12].…”
Section: Introductionmentioning
confidence: 99%