Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

Grour, Tarek El; Pasadas, Francisco; Najari, Montassar; Marín, Enrique G.; Toral-López, Alejandro; Ruiz, Francisco G.; Godoy, A.; Jiménez, David; Mır, L. El

doi:10.1109/ted.2021.3112407

Cited by 9 publications

(7 citation statements)

References 36 publications

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“…Indeed, we check that

gets back to our previously reported compact model for 2D EIS ion-sensitive FETs (ISFETs) reported in [ 71 ]. The agreement between the model outcome and measurements is excellent for all regimes of operation as shown in Figure 3 .…”

Section: Resultssupporting

confidence: 64%

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Compact Modeling of Two-Dimensional Field-Effect Biosensors

Grour

Marín

Pasadas

et al. 2023

Sensors

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A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the analytical description of the electrostatics including the charge density in the 2D semiconductor, the site-binding modeling of the barrier oxide surface charge, and the Stern layer plus an ion-permeable membrane, all coupled with the carrier transport inside the biosensor and solved by making use of the Donnan potential inside the ion-permeable membrane formed by charged macromolecules. This electrostatics and transport description account for the main surface-related physical and chemical processes that impact the biosensor electrical performance, including the transport along the low-dimensional channel in the diffusive regime, electrolyte screening, and the impact of biological charges. The model is implemented in Verilog-A and can be employed on standard circuit design tools. The theoretical predictions obtained with the model are validated against measurements of a MoS2 field-effect biosensor for streptavidin detection showing excellent agreement in all operation regimes and leading the way for the circuit-level simulation of biosensors based on 2D semiconductors.

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“…Indeed, we check that

Section: Resultssupporting

confidence: 64%

“…The agreement between the model outcome and measurements is excellent for all regimes of operation as shown in Figure 3 . The performance of this MoS 2 technology for ion detection in terms of current and voltage sensitivities for the different operation regions can also be found in [ 71 ].…”

Section: Resultsmentioning

confidence: 99%

Compact Modeling of Two-Dimensional Field-Effect Biosensors

Grour

Marín

Pasadas

et al. 2023

Sensors

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“…Re-expressing Equations (2) and (3),

where

and

. Meanwhile,

for MoS 2 [ 33 ] is represented by the following equation:

where

and

are the degeneracy of the K and Q conduction valleys, respectively. The terms

and

are their respective density of state effective masses [ 34 ].…”

Section: Device Modelingmentioning

confidence: 99%

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

et al. 2023

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Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I–V characteristics of field-effect transistors based on MoS2. The study begins by developing a ballistic current equation using a circuit model with two contacts. The transmission probability, which considers both the acoustic and optical mean free path, is then derived. Next, the effect of phonon scattering on the device was examined by including transmission probabilities into the ballistic current equation. According to the findings, the presence of phonon scattering caused a decrease of 43.7% in the ballistic current of the device at room temperature when L = 10 nm. The influence of phonon scattering became more prominent as the temperature increased. In addition, this study also considers the impact of strain on the device. It is reported that applying compressive strain could increase the phonon scattering current by 13.3% at L = 10 nm at room temperature, as evaluated in terms of the electrons’ effective masses. However, the phonon scattering current decreased by 13.3% under the same condition due to the existence of tensile strain. Moreover, incorporating a high-k dielectric to mitigate the impact of scattering resulted in an even greater improvement in device performance. Specifically, at L = 6 nm, the ballistic current was surpassed by 58.4%. Furthermore, the study achieved SS = 68.2 mV/dec using Al2O3 and an on–off ratio of 7.75 × 104 using HfO2. Finally, the analytical results were validated with previous works, showing comparable agreement with the existing literature.

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“…[68] The silicon channel has equal dimensions (20 µm-long and 2 µm-wide), and it consists of a p-type substrate with acceptor concentration N A = 4 × 10 15 cm −3 and hole mobility of µ h,Si = 400 cm 2 Vs −1 . The electrolyte is a 1xPBS, so a C DL of 23 µF cm −2 is assumed (calculated from site-binding theory [57] ), while C Stern of 20 µF cm −2 was taken. [54] Figure 7a shows the simulated transfer characteristics of the accumulation GoSFET together with the experimental measurements.…”

Section: Theoretical Interpretation Of Experimental Datamentioning

confidence: 99%

“…The potential Ψ 0 , according to the site-binding theory, [56] is dependent on pH, ionic concentration, the density of surface ionizable sites, and dissociation constants. [57,58] Here Ψ 0 is considered as a gate offset bias as the electrolyte characteristics are not modified during the experimental measurements.…”

Section: Electrostatics Of Liquid-gated Gosfetsmentioning

confidence: 99%

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Fomin

Marín

Pasadas

et al. 2023

Adv Elect Materials

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This continuous downsizing has brought numerous advantages but also relevant challenges, coming hand-in-hand with the conception of novel and varied applications. [3][4][5][6] Among them, biosensing and bioelectronic applications have been successfully explored [7,8] , e.g., employing functionalized specific biomarkers on SiFETs surface, enabling selective label-free detection. [9,10] Silicon has also been utilized for numerous in vitro recordings of electrogenic cells (cardiac or neural) or even in vivo mapping of the whole brain. [11,12] However, it is known to be a bioresorbable material that degrades over time once immersed in saline, thus, suffering from a limited operation time for in vivo applications. [13,14] While silicon still dominates the industrial semiconductor scene, a new material has emerged rather recently, transforming materials science: graphene. Accompanied by other two-dimensional (2D) materials, graphene has already opened new prospects in modern nanoelectronic applications [15][16][17][18] and also holds a great promise for bio-and neuroapplications due to its extraordinary conductivity and good biocompatibility. [19][20][21] In particular, graphene-based FETs (GFETs) and microelectrode arrays (MEAs), both rigid and flexible, have been reported to successfully interface with electrogenic cellsThe combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology of graphene-on-silicon heterostructures as solution-gated transistors for bioelectronics applications is presented. The proposed graphene-onsilicon field-effect transistors (GoSFETs) are fabricated by exploiting various conformations of channel doping and dimensions. The fabricated devices demonstrate hybrid behavior with features specific to both graphene and silicon, which are rationalized via a comprehensive physics-based compact model which is purposely implemented and validated against measured data. The developed theory corroborates that the device hybrid behavior can be explained in terms of two independent silicon and graphene carrier transport channels, which are, however, strongly electrostatically coupled. Although GoSFET transconductance and carrier mobility are found to be lower than in conventional silicon or graphene field-effect transistors, it is observed that the combination of both materials within the hybrid channel contributes uniquely to the electrical response. Specifically, it is found that the graphene sheet acts as a shield for the silicon channel, giving rise to a nonuniform potential distribution along it, which impacts the transport, especially at the subthreshold region, due to non-negligible diffusion current.

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Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

Cited by 9 publications

References 36 publications

Compact Modeling of Two-Dimensional Field-Effect Biosensors

Compact Modeling of Two-Dimensional Field-Effect Biosensors

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

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