Efficient physics‐based compact model for the Schottky barrier carbon nanotube FET

Abstract

This paper presents a computationally efficient physics‐based compact model for the Schottky barrier CNTFET. This compact model captured a number of features exhibited by these transistors such as ballistic transport and channel potential variation with respect to channel charge. Also quantum capacitance is pointed out. A new analytical model of the channel charge is presented here. The compact model accuracy is verified within its range of validity. To investigate on the SB influence, two classical circuit applications are simulated; the logical inverter and the 5 stages ring oscillator (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors

“…Since the band-to-band tunneling [10] is not considered in this study, instead of non-equilibrium Green's function technique, we used semi-classical approach [11] available in MOSCNT to generate the reference data. As the investigated structure is a MOSFET-like conventional CNFET [12] without any Schottky-barrier (SB) [13,14], inability of MOSCNT to handle SB contacts does not pose any limitation in our study.…”