Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors

Abstract

Estimation of total channel charge (Q T ot ) of carbon nanotube field effect transistor from the self-consistently computed charge density (Q T op ) at the top of conduction band subband minima, is found to be inaccurate. A regional approach based on extended ballistic transport theory is proposed to model Q T ot , and its partitioning into source and drain components. The models for charges and subsequently derived capacitances are validated with the numerically simulated data obtained using semi-classical technique. The model agreement with numerical data shows the superiority of our regional approach compared to ones obtained from only the information of Q T op .