We report on the current-carrying capacity of the nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that the TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA cm(-2)-an order-of-magnitude higher than that for copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in a low surface roughness and in the absence of the grain boundaries. These features can potentially enable the downscaling of the nanowires to lateral dimensions in a few-nm range. Our results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.

We have investigated low-frequency 1/f noise in the boron nitride -graphene -boron nitride heterostructure field-effect transistors on Si/SiO 2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from ~30000 to ~36000 cm 2 /Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to ~510 -9 μm 2 Hz -1 , which is a factor of 5 -10 lower than that in non-encapsulated graphene devices on Si/SiO 2 . The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO 2 gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.

No abstract

No abstract

No abstract

No abstract

No abstract

No abstract