Breakdown current density in h-BN-capped quasi-1D TaSe<sub>3</sub>metallic nanowires: prospects of interconnect applications

Stolyarov, Maxim A.; Liu, Guanxiong; Bloodgood, Matthew A.; Aytan, Ece; Jiang, Chenglong; Samnakay, R.; Salguero, Tina T.; Nika, Denis L.; Rumyantsev, Sergey; Shur, M. S.; Bozhilov, Krassimir N.; Balandin, Alexander A.

doi:10.1039/c6nr03469a

Cited by 81 publications

(130 citation statements)

References 53 publications

Supporting

Mentioning

124

Contrasting

Unclassified

Order By: Relevance

“…141 The method starts with 6 mg of bulk powdered TaSe3 which is sonicated in 10 ml of ethanol for several hours. The mixture is then centrifuged at 2600 rpm for 15 min to remove large particles.…”

Section: Isolation and Exfoliation Of Mx3 Crystalsmentioning

confidence: 99%

“…Recently, Stolyarov et al reported on the breakdown current density of TaSe3 nanowires with a hexagonal boron nitride capping flake for use as electrical interconnects. 141 The boron nitride capping layer was used to facilitate in heat dissipation and to protect the nanowire from oxidation. Figure 8(a) shows a model representation of the devices studied.…”

Section: Electrical Properties and Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

View full text Add to dashboard Cite

The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

show abstract

Section: Isolation and Exfoliation Of Mx3 Crystalsmentioning

confidence: 99%

Section: Electrical Properties and Devicesmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

View full text Add to dashboard Cite

show abstract

“…The noise activation energies extracted from the two commonly accepted physical models, the Dutta-Horn model [21,24] and the empirical noise model in metals [22,26,27], have shown an excellent agreement with the activation 3 | P a g e energies obtained from the industry standard electromigration mean-time-to-failure (MTF) tests. These considerations explain additional practical motivations for investigation of the lowfrequency noise in quasi-1D nanowires of TaSe3, which exhibit promise as ultimately downscaled local interconnects owing to their single-crystal atomic thread structure and exceptionally high breakdown current density [18].The bulk TaSe3 crystals were synthesized by the chemical vapor transport (CVT) method and then were solvent exfoliated (see Methods). The high quality of both bulk and exfoliated quasi-1D TaSe3 samples has been confirmed using a variety of experimental techniques including high-resolution transmission electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, powder X-ray diffraction, and electron probe micro analysis, as reported previously [18].…”

mentioning

confidence: 99%

“…These considerations explain additional practical motivations for investigation of the lowfrequency noise in quasi-1D nanowires of TaSe3, which exhibit promise as ultimately downscaled local interconnects owing to their single-crystal atomic thread structure and exceptionally high breakdown current density [18].…”

mentioning

confidence: 99%

Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires

et al. 2016

Self Cite

View full text Add to dashboard Cite

We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I 2 , compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f 2 -type as temperature increases to ~400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals we determined that the noise activation energy for quasi-1D TaSe3 nanowires is approximately EP≈1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration, is EA=0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.Keywords: quasi-1D materials; van der Waals materials; low-frequency noise; interconnects 2 | P a g e The investigations of the two-dimensional layers and heterostructures revealed new physics and demonstrated promising applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Starting with graphene [3][4][5], and spreading to a wide range of layered van der Waals materials [6][7][8][9][10], successful isolation of individual atomic layers from their respective bulk crystals by mechanical exfoliation led to the fast growing research activities in the 2D materials. In contrast to the layered van der Waals materials that yield 2D crystals, materials, such as TaSe3 and TiS3 [15][16][17] yield the quasi-onedimensional (1D) van der Waals crystal structures. These materials belong to the group of the transition metal trichalcogenides MX3 (where M = Mo, W, and other transition metals; X = S, Se, Te). In the monoclinic crystal structure of TaSe3, the trigonal prismatic TaSe3 units form continuous chains extending along the b axis and leading to fiber-and needle-like crystals with anisotropic semi-metallic or metallic properties. The quasi-1D atomic threads are weakly bound in bundles by the van der Waals forces. As a consequence, the mechanical exfoliation of the MX3 crystals results not in the 2D layers but rather in the quasi-1D van der Waals nanowires. We have recently demonstrated quasi-1D TaSe3 nanowires with the record high current density exceeding JB~10 MA/cm 2 , which is an order of magnitude larger than that for the Cu interconnects [18].In this Letter, we report on the excess low-frequency electronic noise in quasi-1D nanowires of TaSe3 capped with the quasi-2D h-BN layers. The h-BN capping was used as a surface passivation protecting from environmental exposure. The measuremen...

show abstract

“…Much like MX 2 materials, MX 3 materials are amenable to mechanical or chemical exfoliation along the van der Waals gap, 6,14 and recent studies show that their properties can be maintained or even enhanced by nanostructuring. 12,15 Here we consider NbS 3 , arguably the least-well-understand metal trichalcogenide.…”

mentioning

confidence: 99%

Monoclinic structures of niobium trisulfide

et al. 2017

Self Cite

View full text Add to dashboard Cite

Two new polymorphs of niobium trisulfide are established by single crystal x-ray diffraction. NbS3-iv crystallizes in the monoclinic space group P21/c with lattice parameters a = 6.7515(5) Å, b = 4.9736(4) Å, c = 18.1315(13) Å, and β = 90.116(2)°. Its structure is based on chains of [NbS6] trigonal prisms containing Nb–Nb pairs with a bond length of 3.0448(8) Å; this pairing causes the chains to corrugate slightly along their axis, a feature also present in triclinic NbS3-i that leads to semiconductor properties. The stacking arrangement of chains is different in these polymorphs, however, with NbS3-i having an ABCDE repeating sequence of chain bilayers and NbS3-iv having an AB repeating sequence. HRTEM studies show the presence of topotactically-oriented intergrown zones and numerous dislocations, which result in mosaic structuring. A second new polymorph, NbS3-v, crystallizes in the monoclinic space group P21/m with lattice parameters a = 4.950(5) Å, b = 3.358(4) Å, c = 9.079(10) Å, β = 97.35(2)°. In contrast to NbS3-iv, NbS3-v maintains fixed a Nb–Nb bond distance of 3.358(4) Å along the chains, and it has an ABCDE repeating sequence of chain bilayers similar to NbS3-i. High resolution scanning transmission electron microscopy (HR-STEM) imaging of an exfoliated NbS3-v nanoribbon shows the continuous [NbS6] chains oriented along the b-axis. These results provide the first firmly established structural data for monoclinic NbS3. In addition, SEM images show the formation of NbS3 rings and cylinders, and a combination of powder x-ray diffraction and Raman spectroscopy provides a way to distinguish between NbS3 polymorphs.

show abstract

Breakdown current density in h-BN-capped quasi-1D TaSe₃metallic nanowires: prospects of interconnect applications

Cited by 81 publications

References 53 publications

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires

Monoclinic structures of niobium trisulfide

Contact Info

Product

Resources

About

Breakdown current density in h-BN-capped quasi-1D TaSe3metallic nanowires: prospects of interconnect applications

Cited by 81 publications

References 53 publications

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

Monoclinic structures of niobium trisulfide

Contact Info

Product

Resources

About

Breakdown current density in h-BN-capped quasi-1D TaSe₃metallic nanowires: prospects of interconnect applications

Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires